초록 ▼

The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provide

The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.

대표청구항 ▼

1. A method of manufacturing a semiconductor device, said method comprising the steps of:forming a transistor on a semiconductor substrate; said transistor including: a first source region in the semiconductor substrate; a first drain region in the semiconductor substrate; a first channel region bet

1. A method of manufacturing a semiconductor device, said method comprising the steps of:forming a transistor on a semiconductor substrate; said transistor including: a first source region in the semiconductor substrate; a first drain region in the semiconductor substrate; a first channel region between the source and drain regions; a first gate electrode adjacent over at least the first channel region with a first gate insulating film interposed therebetween; forming a first interlayer insulating film having a leveled surface over the transistor; forming a second interlayer insulating film on the first interlayer insulating film; forming an amorphous semiconductor film over the second interlayer insulating film; crystallizing the amorphous semiconductor film to form a crystalline semiconductor film; forming a second gate insulating film adjacent to the crystalline semiconductor film; forming a second gate electrode adjacent to the crystalline semiconductor film with the second gate insulating film interposed therebetween; introducing an impurity into the crystalline semiconductor film to form at least a second source region, a second drain region and a second channel region between the second source and drain regions.