초록 ▼

A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from

A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.

대표청구항 ▼

1. A method for anisotropically etching an organic insulating layer through an aperture in a mask layer, comprising:introducing a substrate provided with an organic low-k insulating layer and an overlying mask layer having an aperture into a processing chamber; and creating a plasma within said cham

1. A method for anisotropically etching an organic insulating layer through an aperture in a mask layer, comprising:introducing a substrate provided with an organic low-k insulating layer and an overlying mask layer having an aperture into a processing chamber; and creating a plasma within said chamber having components derived from an oxidizing gas and a passivation gas, wherein the passivation gas is derived from boron containing gasses, wherein the ratio of said oxidizing gas to said passivation gas is at least 50:1, whereby said organic insulating layer is etched through said aperture in said mask layer.