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Method for producing a thin membrane and resulting structure with membrane 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/46
출원번호 US-0763860 (2001-02-28)
우선권정보 FR-0008380 (1999-06-30)
국제출원번호 PCT/FR00/01898 (2000-06-29)
§371/§102 date 20010228 (20010228)
국제공개번호 WO01/03172 (2001-01-11)
발명자 / 주소
  • Bernard Aspar FR
  • Michel Bruel FR
  • Claude Jaussaud FR
  • Chrystelle Lagahe FR
출원인 / 주소
  • Commissariat a l'Energie Atomique FR
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 29  인용 특허 : 24

초록 ▼

The invention relates to a method for producing a thin membrane, comprising the following steps:implanting gas species, through one surface of a first substrate (10) and through one surface of a second substrate (20), which in said substrates are able to create microcavities (11, 21) delimiting, for

대표청구항 ▼

1. Method for producing a thin membrane (1, 40), characterised in that it comprises the following steps:implantation of gas species through one surface (12) of a first substrate (10) and through one surface (22) of a second substrate (20), which in said substrates are able to create microcavities (1

이 특허에 인용된 특허 (24)

  1. Henley Francois J. ; Cheung Nathan W., Economical silicon-on-silicon hybrid wafer assembly.
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  2. James W. Adkisson ; Ramachandra Divakaruni ; Jeffrey P. Gambino ; Jack A. Mandelman, Embedded DRAM on silicon-on-insulator substrate.
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  3. Henley Francois J. ; Cheung Nathan W., Gettering technique for silicon-on-insulator wafers.
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  4. Okonogi Kensuke,JPX, Laminated SOI substrate and producing method thereof.
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  5. Sarma Kalluri R. (Mesa AZ), Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display.
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  6. Bernard Aspar FR; Michel Bruel FR; Thierry Barge FR, Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element.
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  7. Konishi Junichi (Ikeda JPX) Maari Kouichi (Ikeda JPX) Taneda Toshihiko (Minoo JPX) Kishimoto Akiko (Kawanishi JPX), Method for producing semiconductor film.
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  8. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
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  9. Goesele Ulrich M. ; Tong Q.-Y., Method for the transfer of thin layers of monocrystalline material to a desirable substrate.
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  10. Orin Wayne Holland ; Darrell Keith Thomas ; Richard Bayne Gregory ; Syd Robert Wilson ; Thomas Allen Wetteroth, Method for transfer of thin-film of silicon carbide via implantation and wafer bonding.
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  11. Aga Hiroji,JPX ; Mitani Kiyoshi,JPX ; Inazuki Yukio,JPX, Method of fabricating an SOI wafer and SOI wafer fabricated thereby.
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  12. Chungpin Liao TW, Method of manufacturing SOI wafer with buried layer.
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  13. Shunpei Yamazaki JP, Method of manufacturing a semiconductor device.
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  14. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
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  15. Henley Francois J. ; Cheung Nathan W., Pressurized microbubble thin film separation process using a reusable substrate.
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  16. Lea Di Cioccio FR, Process for fabricating a structure of semiconductor-on-insulator type in particular SiCOI.
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  17. Alexander Y Usenko ; William N. Carr, Process for lift off and transfer of semiconductor devices onto an alien substrate.
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  18. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for producing semiconductor article.
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  19. Bruel Michel,FRX, Process for the manufacture of thin films of semiconductor material.
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  20. Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Process for the production of a structure having a thin semiconductor film on a substrate.
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  21. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
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  22. Biasse Beatrice,FRX ; Bruel Michel,FRX ; Zussy Marc,FRX, Process for transferring a thin film from an initial substrate onto a final substrate.
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  23. Ohshima Hisayoshi,JPX ; Matsui Masaki,JPX ; Onoda Kunihiro,JPX ; Yamauchi Shoichi,JPX, Semiconductor substrate manufacturing method.
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  24. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.
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이 특허를 인용한 특허 (29)

  1. Pinnington, Thomas Henry; Zahler, James M.; Park, Young-Bae; Ladous, Corinne; Olson, Sean, Bonded intermediate substrate and method of making same.
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  2. Pinnington, Thomas Henry; Zahler, James M.; Park, Young-Bae; Tsai, Charles; Ladous, Corinne; Atwater, Jr., Harry A.; Olson, Sean, Bonded intermediate substrate and method of making same.
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  3. Atwater, Jr., Harry A.; Zahler, James M., Bonded semiconductor substrate.
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  4. Aspar,Bernard; Lagahe,Chrystelle; Rayssac,Olivier; Ghyselen,Bruno, Embrittled substrate and method for making same.
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  5. He, Tom Xiaohai; Colvin, Michael S., Hermetically bonding ceramic and titanium with a Ti-Pd braze interface.
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  6. Xiaohai, Tom; Colvin, Michael S, Hermetically bonding ceramic and titanium with a palladium braze.
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  7. Bressot,S챕verine; Rayssac,Olivier; Aspar,Bernard, Layer transfer method.
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  8. Bruel, Michel, Method and device for fabricating a layer in semiconductor material.
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  9. Butschke, Joerg; Ehrmann, Albrecht; Haugeneder, Ernst; Letzkus, Florian; Springer, Reinhard, Method for fabricating positionally exact surface-wide membrane masks.
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  10. Iwamoto, Takashi, Method for manufacturing piezoelectric device.
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  11. Bruel, Michel, Method of producing a plate-shaped structure, in particular, from silicon, use of said method and plate-shaped structure thus produced, in particular from silicon.
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  12. Aspar, Bernard, Method of transferring a circuit onto a ground plane.
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  13. Atwater, Jr.,Harry A.; Zahler,James M., Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby.
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  14. Atwater, Jr.,Harry A.; Zahler,James M., Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby.
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  15. Letertre,Fabrice; Rayssac,Olivier, Methods for forming an assembly for transfer of a useful layer.
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  16. Letertre,Fabrice; Rayssac,Olivier, Methods for forming an assembly for transfer of a useful layer.
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  17. Letertre, Fabrice; Rayssac, Olivier, Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transfer.
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  18. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods.
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  19. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices with strained semiconductor material.
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  20. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
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  21. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
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  22. Bruel, Michel; Aspar, Bernard; Lagahe-Blanchard, Chrystelle, Methods of making substrate structures having a weakened intermediate layer.
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  23. Atwater, Jr., Harry A.; Zahler, James; Morral, Anna Fontcuberta i; Olson, Sean, Multi-junction solar cells and methods of making same using layer transfer and bonding techniques.
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  24. Sinha, Nishant; Sandhu, Gurtej S.; Smythe, John, Semiconductor material manufacture.
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  25. Letertre, Fabrice, Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer.
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  26. Bilic, Dubravka; Hooper, Stephen R., Sensor protective coating.
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  27. Bilic, Dubravka; Hooper, Stephen R., Sensor protective coating.
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  28. Atwater, Jr.,Harry A.; Zahler,James M.; Morral,Anna Fontcubera I, Wafer bonded epitaxial templates for silicon heterostructures.
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  29. Atwater, Jr.,Harry A.; Zahler,James M.; Morral,Anna Fontcuberta i, Wafer bonded virtual substrate and method for forming the same.
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