초록 ▼

A method of producing a semiconductor member comprises a first step of preparing a first member having a non-porous layer on a semiconductor substrate, and a second step of transferring the non-porous layer from the first member onto a second member, wherein use of the semiconductor substrate from w

A method of producing a semiconductor member comprises a first step of preparing a first member having a non-porous layer on a semiconductor substrate, and a second step of transferring the non-porous layer from the first member onto a second member, wherein use of the semiconductor substrate from which the non-porous layer is separated in the second step as a constituent material of the first member in the first step is conducted (n-1) times ("n" is a natural number not less than 2), the first and second steps are repeated n times, the semiconductor substrate is separated in n-th use in the second step and the separated semiconductor substrate is used for an use other than that of the first and second steps.

대표청구항 ▼

1. A method of producing a semiconductor member, said method comprising:a first step of preparing a first member, the first member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first member onto a secon

1. A method of producing a semiconductor member, said method comprising:a first step of preparing a first member, the first member having a non-porous layer on a semiconductor substrate to produce an SOI wafer; and a second step of transferring the non-porous layer from the first member onto a second member, wherein reuse of the semiconductor substrate from which the non-porous layer is separated in the second step occurs (n-1) times, where n is a natural number greater than or equal to 2, wherein the first and second steps are repeated n times to produce n sheets of the SOI wafers at maximum output, wherein after the second step in n-th use, the semiconductor substrate is used to produce a non-SOI wafer, and wherein the n is determined according to a demand for the SOI wafer or a demand for the non-SOI wafer, or based on the inspection results of the semiconductor substrate.