초록 ▼

Methods of forming thin films include forming a first layer comprising a first element that is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen. A step is then performed to expose the first l

Methods of forming thin films include forming a first layer comprising a first element that is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen. A step is then performed to expose the first layer to an activated hydrogen gas so that halogens associated with the first layer become bound to hydrogen provided by the activated hydrogen gas. The first layer may then be converted to a thin film comprising the first element and a second element, by exposing a surface of the first layer to a second source gas having molecules therein that comprise the second element.

대표청구항 ▼

1. A method for forming a thin film comprising:providing a first reactant containing a halogen on a semiconductor substrate in order to chemisorb a first reactant adsorption layer combined with the halogen on the semiconductor substrate; providing activated hydrogen gas to the first reactant adsorpt

1. A method for forming a thin film comprising:providing a first reactant containing a halogen on a semiconductor substrate in order to chemisorb a first reactant adsorption layer combined with the halogen on the semiconductor substrate; providing activated hydrogen gas to the first reactant adsorption layer in order to remove the halogen from the first reactant adsorption layer; and then providing a second reactant to the first reactant adsorption layer in order to chemisorb the second reactant into the first reactant adsorption layer and define the thin film.