초록 ▼

In order to provide a semiconductor substrate that can be an SOI substrate suitable for production of high-frequency transistor, the semiconductor substrate is produced by a method of producing the semiconductor substrate having a step of bonding a first base having a semiconductor layer region to a

In order to provide a semiconductor substrate that can be an SOI substrate suitable for production of high-frequency transistor, the semiconductor substrate is produced by a method of producing the semiconductor substrate having a step of bonding a first base having a semiconductor layer region to a second base and a step of removing the first base while leaving the semiconductor layer region on the second base, wherein a magnitude relation between the concentration of a p-type impurity and the concentration of an n-type impurity in the bonding atmosphere is established according to the composition of the second base.

대표청구항 ▼

1. A semiconductor substrate having a semiconductor layer region comprising a single-crystal semiconductor through an insulating layer on a support substrate comprising a semiconductor, wherein the support substrate has a composition such that a semiconductor surface portion adjacent to the insulati

1. A semiconductor substrate having a semiconductor layer region comprising a single-crystal semiconductor through an insulating layer on a support substrate comprising a semiconductor, wherein the support substrate has a composition such that a semiconductor surface portion adjacent to the insulating layer is a semiconductor having a resistivity of not less than 100 .OMEGA.cm and a composition such that the support substrate has a region with increasing resistivity toward the insulating layer in the direction of thickness thereof, and the region is a region of a depth within 3 .mu.m from a surface of the support substrate.