$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Functionally graded coatings for abrasive particles and use thereof in vitreous matrix composites 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C09K-003/14
  • B24D-003/14
  • B24D-003/00
출원번호 US-0987863 (2001-11-16)
발명자 / 주소
  • Aaron W. Saak
  • Mark P. D'Evelyn
  • Chung S. Kim
  • Michael H. Zimmerman
  • Steven W. Webb
출원인 / 주소
  • General Electric Company
인용정보 피인용 횟수 : 40  인용 특허 : 6

초록

Coated abrasive particle for use in vitreous bond matrices, which particle is coated with between 1 and about 50 coating layers. Each coating layer ranges in thickness from between about 0.1 and 50 microns. Each layer has the composition, MCXNYBZOW, where, M represents one or more of Ti, Si, V, Cr,

대표청구항

1. Coated abrasive particle for use in vitreous bond matrices, which comprises:an abrasive particle coated with between 2 and about 50 coating layers, each coating layer ranging in thickness from between about 0.1 and 50 microns, each layer having the composition: MCXNYBZOW, where, M represents one

이 특허에 인용된 특허 (6)

  1. Celikkaya Ahmet (Woodbury MN), Method of making alumina abrasive grain having a metal boride coating thereon.
  2. Celikkaya Ahmet (Woodbury MN) Allen Gregory D. (Woodbury MN), Method of making alumina abrasive grain having a metal carbide coating thereon.
  3. Celikkaya Ahmet (Woodbury MN) Allen Gregory D. (Woodbury MN), Method of making alumina abrasive grain having a metal nitride coating thereon.
  4. Lee Minyoung (Schenectady NY) Szala Lawrence E. (Scotia NY) Hibbs ; Jr. Louis E. (Schenectady NY), Modifying the surface of cubic boron nitride particles.
  5. Lee Minyoung (Schenectady NY) Szala Lawrence E. (Scotia NY) Hibbs ; Jr. Louis E. (Schenectady NY), Modifying the surface of diamond particles.
  6. St. Pierre Philippe D. (Worthington OH), Refractory metal oxide coated abrasives and grinding wheels made therefrom.

이 특허를 인용한 특허 (40)

  1. D'Evelyn, Mark P., Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride.
  2. Can, Antionette; Mochubele, Anna Emela; Davies, Geoffrey John; Myburgh, Johannes Lodewikus, Coated abrasive materials and method of manufacture.
  3. Oboodi, Reza; Piascik, James; Schenk, Bjoern, Components, turbochargers, and methods of forming the components.
  4. Oboodi, Reza; Piascik, James; Schenk, Bjoern, Components, turbochargers, and methods of forming the components.
  5. Schmidt, Wayde R.; Sheedy, Paul; Werkheiser, William; Kashyap, Tania Bhatia; Goberman, Daniel G., Composite article including silicon oxycarbide layer.
  6. Schultz, Roger L.; Fripp, Michael L.; Zhang, Haoyue; Gleitman, Daniel D., Electrical connections made with dissimilar metals.
  7. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William, Gallium-nitride-on-handle substrate materials and devices and method of manufacture.
  8. D'Evelyn, Mark P.; Chakraborty, Arpan; Houck, William D., Gallium—nitride-on-handle substrate materials and devices and method of manufacture.
  9. Schmidt, Mathew; D'Evelyn, Mark P., High indium containing InGaN substrates for long wavelength optical devices.
  10. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  11. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  12. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  13. D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  14. Pakalapati, Rajeev T.; D'Evelyn, Mark P., High pressure apparatus and method for nitride crystal growth.
  15. D'Evelyn, Mark P.; Kapp, Joseph A.; Lawrenson, John C., High pressure apparatus with stackable rings.
  16. D'Evelyn, Mark P.; Speck, James S.; Kamber, Derrick S.; Pocius, Douglas W., Large area nitride crystal and method for making it.
  17. D'Evelyn, Mark P.; Poblenz, Christiane; Krames, Michael R., Method for growth of indium-containing nitride films.
  18. D'Evelyn, Mark P.; Speck, James S., Method for synthesis of high quality large area bulk gallium based crystals.
  19. Krames, Mike; D'Evelyn, Mark; Pakalapati, Rajeev; Alexander, Alex; Kamber, Derrick, Method of making bulk InGaN substrates and devices thereon.
  20. D'Evelyn, Mark P.; Sharma, Rajat, Microcavity light emitting diode method of manufacture.
  21. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
  22. D'Evelyn, Mark P., Nitride crystal with removable surface layer and methods of manufacture.
  23. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M., Photonic-crystal light emitting diode and method of manufacture.
  24. D'Evelyn, Mark P.; Sharma, Rajat; Hall, Eric M.; Feezell, Daniel F., Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors.
  25. Can, Antionette; Mochubele, Anna Emela; Davies, Geoffrey John; Myburgh, Johannes Lodewikus, Polycrystalline abrasive materials and method of manufacture.
  26. D'Evelyn, Mark P., Polycrystalline group III metal nitride with getter and method of making.
  27. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  28. D'Evelyn, Mark P.; Kamber, Derrick S., Polycrystalline group III metal nitride with getter and method of making.
  29. D'Evelyn, Mark P., Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer.
  30. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  31. D'Evelyn, Mark P., Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride.
  32. D'Evelyn, Mark P., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  33. D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; Downey, Bradley C., Process for large-scale ammonothermal manufacturing of gallium nitride boules.
  34. D'Evelyn, Mark P., Semi-insulating group III metal nitride and method of manufacture.
  35. Sharma, Rajat; Hall, Eric M.; Poblenz, Christiane; D'Evelyn, Mark P., Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods.
  36. Jiang, Wenkan; Ehrentraut, Dirk; D'Evelyn, Mark P., Transparent group III metal nitride and method of manufacture.
  37. Norris, Michael W; Johnson, Marvin L, Underseas seismic acquisition.
  38. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  39. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
  40. Raring, James W.; Hall, Eric M.; D'Evelyn, Mark P., White light devices using non-polar or semipolar gallium containing materials and phosphors.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로