초록 ▼

A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed

A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed while the second insulating film has extensions which extend beyond the side edges of the gate electrode, and performing ion introduction for forming impurity regions using the gate electrode and extensions of the gate insulating film as a mask. The condition of the ion introduction is varied in order to control the regions of the semiconductor layer to be added with the impurity and the concentration of the impurity therein.

대표청구항 ▼

1. A method of manufacturing a semiconductor device comprising the steps of:forming a semiconductor layer over a substrate; forming a gate insulating film over said semiconductor layer; forming a gate electrode over said gate insulating film; forming higher impurity concentration regions by introduc

1. A method of manufacturing a semiconductor device comprising the steps of:forming a semiconductor layer over a substrate; forming a gate insulating film over said semiconductor layer; forming a gate electrode over said gate insulating film; forming higher impurity concentration regions by introducing ions of an impurity into said semiconductor layer using said gate electrode and said gate insulating film as masks; forming lower impurity concentration regions by introducing ions of an impurity into said semiconductor layer using said gate insulating film for controlling impurity concentration thereof; and activating the introduced impurity in said higher and lower impurity concentration regions by irradiating a laser beam from a rear side of said substrate, wherein said laser beam is a second harmonic of a YAG laser.