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A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to for

A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

대표청구항 ▼

1. A method of forming a device on a substrate, comprising:(a) forming a first metal layer on a substrate, wherein the first metal layer is formed by depositing a first metal-containing seed layer, treating the first metal-containing seed layer to reduce the oxygen content therein, and depositing a

1. A method of forming a device on a substrate, comprising:(a) forming a first metal layer on a substrate, wherein the first metal layer is formed by depositing a first metal-containing seed layer, treating the first metal-containing seed layer to reduce the oxygen content therein, and depositing a first metal bulk layer on the treated first metal-seed layer; (b) exposing the first metal layer to a first oxygen-containing environment to form a first conducting oxygen-containing layer; (c) forming an insulator on the first conducting oxygen-containing layer; (d) forming a second metal layer on the insulator; (e) exposing the second metal layer to a second oxygen-containing environment to form a second conducting oxygen-containing layer; and (f) forming a third metal layer on the second conducting oxygen-containing layer.