초록 ▼

A semiconductor and manufacturing method is provided for device interconnects with a catalytic layer of copper, palladium, nickel, cobalt, silver, or other catalytic material deposited in a atomic layer by atomic layer epitaxy on a barrier layer of tantalum, titanium, tungsten, their nitrides, or a

A semiconductor and manufacturing method is provided for device interconnects with a catalytic layer of copper, palladium, nickel, cobalt, silver, or other catalytic material deposited in a atomic layer by atomic layer epitaxy on a barrier layer of tantalum, titanium, tungsten, their nitrides, or a compound thereof between the barrier layer and an electroless seed layer on which conductive channel and via material is deposited.

대표청구항 ▼

1. A semiconductor comprising:a semiconductor substrate; a dielectric layer formed on a region of the semiconductor substrate; an opening in the dielectric layer, the opening defined by walls of the dielectric layer and exposing a conductive area in the semiconductor; a barrier layer over the dielec

1. A semiconductor comprising:a semiconductor substrate; a dielectric layer formed on a region of the semiconductor substrate; an opening in the dielectric layer, the opening defined by walls of the dielectric layer and exposing a conductive area in the semiconductor; a barrier layer over the dielectric layer in the opening, including along the walls, and in conductive contact with the conductive area; a catalytic layer having an atomic thickness, the catalytic layer over and bonded to the barrier layer a seed layer of conductive material over and bonded to the catalytic layer; and a conductive layer in over the seed layer and bonded to the seed layer; the conductive layer substantially filling the opening.