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Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-005/18
  • C25D-005/00
  • C25D-007/12
  • B23H-003/00
출원번호 US-0735546 (2000-12-14)
발명자 / 주소
  • Jalal Ashjaee
  • Boguslaw A. Nagorski
  • Bulent M. Basol
  • Homayoun Talieh
  • Cyprian Uzoh
출원인 / 주소
  • NuTool, Inc.
대리인 / 주소
    Crowell & Moring LLP
인용정보 피인용 횟수 : 76  인용 특허 : 43

초록

Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical c

대표청구항

1. A method of contacting a wafer comprising:providing an electrode having an electrode area, making electrical contact to a wafer frontal side using electrical contacts outside the electrode area, and causing relative movement between said wafer and the electrical contacts while maintaining a porti

이 특허에 인용된 특허 (43)

  1. Boudot Bernard (Paris FRX) Nury Georges (Frepillon FRX) Lambert Andre (Louvres FRX), Additive composition, bath and process for acid copper electroplating.
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  36. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.
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  38. Inazawa Koichiro,JPX ; Ishikawa Yoshio,JPX ; Asakawa Takashi,JPX ; Hiratsuka Masato,JPX ; Okayama Nobuyuki,JPX, Plasma etching apparatus.
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이 특허를 인용한 특허 (76)

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