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Back-illuminated heterojunction photodiode

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/0304
출원번호 US-0275632 (1999-03-24)
발명자 / 주소
  • Wei X. Yang
  • Thomas E. Nohava
  • Scott A. McPherson
  • Robert C. Torreano
  • Subash Krishnankutty
  • Holly A. Marsh
출원인 / 주소
  • Honeywell International Inc.
대리인 / 주소
    Kris T. Frederick
인용정보 피인용 횟수 : 33  인용 특허 : 9

초록

A p-i-n photodiode having a high responsivity and quantum efficiency due to an AlGaN heterojunction where photons are absorbed within the p-n junction thereby eliminating carrier losses due to surface recombination and diffusion processes. Ultraviolet light comes through a transparent substrate, suc

대표청구항

1. A back-illuminated heterojunction photodiode for detecting an incoming light beam, comprising:a substrate, the substrate being substantially transparent to the incoming light beam; a first electrode layer formed above said substrate, said first electrode layer being substantially transparent to t

이 특허에 인용된 특허 (9)

  1. Khan Muhammad A. (White Bear Lake MN) VanHove James M. (Eagan MN) Olson Donald T. (Circle Pines MN), Aluminum gallium nitride laser.
  2. Edmond John A. ; Kong Hua-Shuang, Double heterojunction light emitting diode with gallium nitride active layer.
  3. Van Hove James M. (Eagan MN) Kuznia Jon N. (Bloomington MN) Olson Donald T. (Roseville MN) Kahn Muhammad A. (White Bear Lake MN) Blasingame Margaret C. (Moundsview MN), High responsivity ultraviolet gallium nitride detector.
  4. Schetzina Jan Frederick (Cary NC), Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitrid.
  5. Razeghi Manijeh, Method for making III-Nitride laser and detection device.
  6. Moustakas Theodore D., Photodetectors using III-V nitrides.
  7. Moustakas Theodore D. (Dover MA) Misra Mira (Arlington MA), Photodetectors using III-V nitrides.
  8. Nitta Koichi,JPX, Semiconductor device and method of manufacturing the same.
  9. Khan M. Asif (Burnsville MN) Schulze Richard G. (Hopkins MN) Skogman Richard A. (Plymouth MN), Tunable cut-off UV detector based on the aluminum gallium nitride material system.

이 특허를 인용한 특허 (33)

  1. Cole, Barrett E.; Marta, Terry, Beam intensity detection in a cavity ring down sensor.
  2. Cole, Barrett E., CRDS mirror for normal incidence fiber optic coupling.
  3. Schr철dinger,Karl, Carrier plate for opto-electronic elements having a photodiode with a thickness that absorbs a portion of incident light.
  4. Cole, Barrett E., Cavity enhanced photo acoustic gas sensor.
  5. Cole, Barrett E., Cavity ring-down spectrometer having mirror isolation.
  6. Cox, James Allen; Cole, Barrett E., Compact gas sensor using high reflectance terahertz mirror and related system and method.
  7. Bui, Peter Steven; Taneja, Narayan Dass, Deep diffused thin photodiodes.
  8. Fritz, Bernard, Enhanced cavity for a photoacoustic gas sensor.
  9. Li,Jing; Fan,Zhaoyang; Lin,Jingyu; Jiang,Hongxing, Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors.
  10. Bui, Peter Steven; Taneja, Narayan Dass, Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays.
  11. Na, Yun-Chung; Cheng, Szu-Lin; Chen, Shu-Lu; Liu, Han-Din; Chen, Hui-Wen; Liang, Che-Fu, Germanium-silicon light sensing apparatus.
  12. Na, Yun-Chung; Cheng, Szu-Lin; Chen, Shu-Lu; Liu, Han-Din; Chen, Hui-Wen; Liang, Che-Fu, Germanium-silicon light sensing apparatus.
  13. Cox, James Allen; Higashi, Robert, High reflectance terahertz mirror and related method.
  14. Bui, Peter Steven; Taneja, Narayan Dass, High speed backside illuminated, front side contact photodiode array.
  15. Na, Yun-Chung; Liang, Che-Fu, High-speed light sensing apparatus.
  16. Higashi, Robert E.; Newstrom-Peitso, Karen M.; Ridley, Jeffrey A., Integral topside vacuum package.
  17. Bui, Peter Steven; Taneja, Narayan Dass, Low crosstalk, front-side illuminated, back-side contact photodiode array.
  18. Wang, Tao, Method for significant reduction of dislocations for a very high A1 composition A1GaN layer.
  19. Cole,Barrett E.; Higashi,Robert E.; Zins,Christopher J.; Krishnankutty,Subash, Multi-substrate package assembly.
  20. Cole, Barrett E.; Marta, Terry; Cox, James Allen; Nusseibeh, Fouad, Multiple wavelength cavity ring down gas sensor.
  21. Cole, Barrett E.; Cox, James A.; Zook, J. David, Optical cavity system having an orthogonal input.
  22. Bui, Peter Steven; Taneja, Narayan Dass, Photodiode and photodiode array with improved performance characteristics.
  23. Bui, Peter Steven, Shallow junction photodiode for detecting short wavelength light.
  24. Bui, Peter Steven; Taneja, Narayan Dass, Shallow junction photodiode for detecting short wavelength light.
  25. Cole,Barrett E.; Higashi,Robert E.; Subramanian,Arunkumar; Krishnankutty,Subash, Spectrally tunable detector.
  26. Bui, Peter Steven; Taneja, Narayan Dass, Tetra-lateral position sensing detector.
  27. Bui, Peter Steven; Taneja, Narayan Dass, Tetra-lateral position sensing detector.
  28. Bui, Peter Steven; Taneja, Narayan Dass, Tetra-lateral position sensing detector.
  29. Bui, Peter Steven; Taneja, Narayan Dass, Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same.
  30. Cox,James A.; Cole,Barrett E., Tunable laser fluid sensor.
  31. Wood,Roland A.; Cole,Barrett E.; Higashi,Robert E.; Youngner,Daniel W., Tunable sensor.
  32. Bui, Peter Steven; Taneja, Narayan Dass; Aliabadi, Manoocher Mansouri, Wavelength sensitive sensor photodiodes.
  33. Na, Yun-Chung; Cheng, Szu-Lin; Chen, Shu-Lu; Liu, Han-Din; Chen, Hui-Wen; Liang, Che-Fu, Wide spectrum optical sensor.
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