초록 ▼

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

대표청구항 ▼

1. A method for forming an insulation layer over a substrate and treating the insulation layer after its formation, the method comprising:flowing a process gas into a substrate processing chamber in which the substrate is disposed; heating the substrate in the substrate processing chamber to form a

1. A method for forming an insulation layer over a substrate and treating the insulation layer after its formation, the method comprising:flowing a process gas into a substrate processing chamber in which the substrate is disposed; heating the substrate in the substrate processing chamber to form a carbon-doped silicon oxide insulation layer over the substrate with said process gas; densifying the insulation layer by exposing the substrate to a reducing environment; and thereafter, curing the insulation layer.