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Programming and erasing methods for a reference cell of an NROM array 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-016/04
출원번호 US-0827596 (2001-04-05)
발명자 / 주소
  • Ilan Bloom IL
  • Eduardo Maayan IL
  • Boaz Eitan IL
출원인 / 주소
  • Saifun Semiconductors Ltd. IL
대리인 / 주소
    Eitan Pearl Latzer & Cohen-Zedek
인용정보 피인용 횟수 : 100  인용 특허 : 94

초록 ▼

A method for programming a reference cell of a memory array includes the steps of programming the reference cell with large programming steps until a threshold voltage level of the reference cell is above an interim target level and programming said reference cell with small programming steps until

대표청구항 ▼

1. A method for programming a reference cell of a memory array, the method using programming pulses, the method comprising the steps of:if a threshold voltage of said reference cell is below an interim target level, raising a drain voltage for a next programming pulse, otherwise, setting said drain

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