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A method of forming an integrated circuit including a Schottky diode includes providing a substrate of a first conductivity type, defining a region of a second conductivity type relative to the substrate and forming an insulator over the second conductivity type region. The method also includes remo

A method of forming an integrated circuit including a Schottky diode includes providing a substrate of a first conductivity type, defining a region of a second conductivity type relative to the substrate and forming an insulator over the second conductivity type region. The method also includes removing an area of the insulator for definition of a contact hole, and removing an area encircling the contact hole and forming highly doped regions of the second conductivity type in second conductivity type regions encircling the contact hole. The method further includes depositing a Schottky metal in the contact hole and annealing the metal to form a suicide interface to the second conductivity type region.

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1. A method of forming an integrated circuit including a Schottky diode, the method comprising:providing a p-type substrate; defining an n-type region relative to the substrate; forming an insulator over the n-type region; removing an area of the insulator for definition of a contact hole, and remov

1. A method of forming an integrated circuit including a Schottky diode, the method comprising:providing a p-type substrate; defining an n-type region relative to the substrate; forming an insulator over the n-type region; removing an area of the insulator for definition of a contact hole, and removing an area encircling the contact hole; forming n+ regions in the n-type regions encircling the contact hole; depositing a Schottky metal in the contact hole; and annealing the metal to form a silicide interface to the n-type region.