초록 ▼

A layer for protecting an underlying functional coating stack for example a single silver layer or double silver layer Low-E coating stack includes silicon oxynitride or silicon aluminum oxynitride layer. The protective film may have a uniform composition throughout its thickness i.e. homogeneous pr

A layer for protecting an underlying functional coating stack for example a single silver layer or double silver layer Low-E coating stack includes silicon oxynitride or silicon aluminum oxynitride layer. The protective film may have a uniform composition throughout its thickness i.e. homogeneous protective layer, a constantly increasing or decreasing index of infraction throughout its thickness i.e. a graded protective layer, or a combination of all or some of the foregoing i.e. a non-homogeneous protective layer. The graded and non-homogeneous layers may have an outer surface of silicon nitride, silicon aluminum nitride, silicon dioxide, silicon oxynitride or silicon aluminum oxynitride. The protective layer of the invention may be the last layer deposited on the functional coating stack or may have a film deposited thereon.

대표청구항 ▼

1. A coated article of the type having a coating comprising an infrared reflecting metal film between dielectric films over a surface of a substrate and a protective layer over the coating, the improvement comprising:wherein the protective layer is a sputter coated silicon oxynitride coating having

1. A coated article of the type having a coating comprising an infrared reflecting metal film between dielectric films over a surface of a substrate and a protective layer over the coating, the improvement comprising:wherein the protective layer is a sputter coated silicon oxynitride coating having the following formula Si3-2xO2xN4-4x where X is greater than 0 and less than 1 and having a composition, or mixture of a single phase or phases containing silicon, oxygen, nitrogen and a conductive element selected from the group consisting of aluminum, boron and a transitional metal wherein the weight of the conductive element is greater than 1% and less than 25% of the total weight of the silicon and the conductive element.