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Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/0336
출원번호 US-0908898 (2001-07-20)
발명자 / 주소
  • Lawrence E. Lach
  • Robert Lempkowski
  • Tomasz L. Klosowiak
  • Keryn Lian
출원인 / 주소
  • Motorola, Inc.
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 173  인용 특허 : 78

초록 ▼

A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline comp

대표청구항 ▼

1. A semiconductor structure comprising:a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; a monocrystalline compound semiconductor material overlying th

이 특허에 인용된 특허 (78)

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