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Method for forming a multi-layer protective coating over porous low-k material 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/31
  • H01L-021/469
출원번호 US-0127371 (2002-04-22)
발명자 / 주소
  • Yu-Huei Cheng TW
  • Chen-Hua Yu TW
출원인 / 주소
  • Taiwan Semiconductor Manufacturing Company, Ltd TW
대리인 / 주소
    Tung & Associates
인용정보 피인용 횟수 : 46  인용 특허 : 6

초록

A method for forming a multi-layer protective coating over a porous low-k (dielectric constant) material for use in a multiple layer semiconductor device including providing a semiconductor process wafer including a process surface said process surface including an uppermost surface of a low-k porou

대표청구항

1. A method for forming a multi-layer protective coating over a porous low-k (dielectric constant) material for use in a multiple layer semiconductor device comprising the steps of:providing a semiconductor process wafer including a process surface; forming a low-k porous material layer over said pr

이 특허에 인용된 특허 (6)

  1. Weimin Li, Low dielectric constant material for integrated circuit fabrication.
  2. Lee Hong-Ji,TWX ; Jeng David Guang-Kai,TWX, Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film.
  3. Ouellet Luc (Granby CAX), Multi-level interconnection CMOS devices with SOG.
  4. Maschwitz Peter A. ; Payne Jonathan S. ; Diffendaffer Paul A., Permeable solar control film.
  5. Ouellet Luc (Granby CAX), Sog with moisture resistant protective capping layer.
  6. Burleigh Malcolm B. (St. Paul MN), Waterproof, moisture-vapor permeable sheet material and method of making the same.

이 특허를 인용한 특허 (46)

  1. Draeger, Nerissa S.; Ray, Gary William, Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles.
  2. Draeger,Nerissa S.; Gray,Gary William, Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles.
  3. Zhong, Linda; Xi, Xiaomei, Electrode for energy storage device with microporous and mesoporous activated carbon particles.
  4. Zhong, Linda; Xi, Xiaomei, Electrode for energy storage device with microporous and mesoporous activated carbon particles.
  5. Gole, James L.; Seals, Lenward T., Enhancement, stabilization and metallization of porous silicon.
  6. Chen, Po-Chang; Leu, Po-Hsiung; Liu, Ding-I, Gap fill self planarization on post EPI.
  7. Chen, Po-Chang; Leu, Po-Hsiung; Liu, Ding-I, Gap fill self planarization on post EPI.
  8. Gole, James L., Gas sensors, methods of preparation thereof, methods of selecting gas sensor materials, and methods of use of gas sensors.
  9. Li, Lih-Ping; Lu, Yung-Cheng, Insulating layer having graded densification.
  10. Jeng,Shin Puu, Low stress semiconductor device coating and method of forming thereof.
  11. Cho,Seon Mee; Srinivasan,Easwar; Lu,Brian G.; Mordo,David, Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties.
  12. Zhu, Jianhong; Toma, Dorel Ioan, Method and system for characterizing porous materials.
  13. Zhu,Jianhong; Toma,Dorel Ioan, Method and system for characterizing porous materials.
  14. Vannier, Patrick, Method for forming interconnection levels of an integrated circuit.
  15. Fox, Keith; Srinivasan, Easwar; Mordo, David; Wu, Qingguo, Method for improving mechanical properties of low dielectric constant materials.
  16. Kelman, Maxim; Shrinivasan, Krishnan; Wang, Feng; Lu, Victor; Chang, Sean; Lu, Guangquan, Method for reducing stress in porous dielectric films.
  17. Li,Wai Kin; Huang,Wu Song, Method of formation of a damascene structure utilizing a protective film.
  18. Tipton,Adrianne K.; Lu,Brian G.; Van Cleemput,Patrick A.; Schulberg,Michelle T.; Wu,Qingguo; Fu,Haiying; Wang,Feng, Method of porogen removal from porous low-k films using UV radiation.
  19. Bandyopadhyay, Ananda K.; Cho, Seon Mee; Fu, Haiying; Srinivasan, Easwar; Mordo, David, Method to improve mechanical strength of low-K dielectric film using modulated UV exposure.
  20. Bandyopadhyay,Ananda K.; Cho,Seon Mee; Fu,Haiying; Srinivasan,Easwar; Mordo,David, Method to improve mechanical strength of low-k dielectric film using modulated UV exposure.
  21. Wu,Qingguo; Niu,Dong; Wang,Honghong; Fu,Haiying, Methods for improving integration performance of low stress CDO films.
  22. Niu,Dong; Fu,Haiying; Lu,Brian; Wang,Feng, Methods for improving the cracking resistance of low-k dielectric materials.
  23. Niu,Dong; Fu,Haiying; Lu,Brian; Wang,Feng, Methods for improving the cracking resistance of low-k dielectric materials.
  24. Wu,Qingguo; Fu,Haiying; Smith,David C.; Mordo,David, Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups.
  25. Wu,Qingguo; Fu,Haiying; Tang,Xingyuan, Methods for producing low-k CDO films.
  26. Wu,Qingguo; Niu,Dong; Fu,Haiying, Methods for producing low-k CDO films with low residual stress.
  27. Wu, Qingguo; Fu, Haiying; Niu, Dong; Bandyopadhyay, Ananda K.; Mordo, David, Methods for producing low-k carbon doped oxide films with low residual stress.
  28. Fox, Keith; Mars, Carole; Kirkpatrick, Willis; Srinivasan, Easwar, Methods for producing low-stress carbon-doped oxide films with improved integration properties.
  29. Mayer, Eric; Alberti, Marc, Methods of forming ohmic layers through ablation capping layers.
  30. Wang,Feng; Schulberg,Michelle T.; Sun,Jianing; Humayun,Raashina; Van Cleemput,Patrick A., Plasma detemplating and silanol capping of porous dielectric films.
  31. Zhong,Linda; Xi,Xiaomei; Zou,Bin, Pretreated porous electrode and method for manufacturing same.
  32. Subramonium, Pramod; Fang, Zhiyuan; Henri, Jon, Pulsed PECVD method for modulating hydrogen content in hard mask.
  33. Subramonium,Pramod; Fang,Zhiyuan; Henri,Jon, Pulsed PECVD method for modulating hydrogen content in hard mask.
  34. Kloster, Grant; Meagley, Robert P.; Goodner, Michael D.; O'brien, Kevin P., Sealing porous dielectric materials.
  35. Kloster, Grant; Meagley, Robert P.; Goodner, Michael D.; O'brien, Kevin P.; Bruner, Don, Sealing porous dielectric materials.
  36. Su, Hung-Wen; Chou, Shih-Wei; Tsai, Ming-Hsing, Semiconductor device.
  37. Su, Hung-Wen; Chou, Shih-Wei; Tsai, Ming-Hsing, Semiconductor device and method for forming the same.
  38. Rivero, Christian; Escales, Jean-Philippe, Stack of layers for protecting against a premature breakdown of interline porous dielectrics within an integrated circuit.
  39. Varadarajan, Bhadri; Chang, Sean; Sims, James S.; Lu, Guangquan; Mordo, David; Ilcisin, Kevin; Pandit, Mandar; Carris, Michael, Tensile dielectric films using UV curing.
  40. Schravendijk, Bart J.; Gaynor, Justin F., Treatment of low K films with a silylating agent for damage repair.
  41. van Schravendijk, Bart J.; Gaynor, Justin F., Treatment of low k films with a silylating agent for damage repair.
  42. Waldfried, Carlo; Escorcia, Orlando; Berry, Ivan, Ultraviolet assisted pore sealing of porous low k dielectric films.
  43. Waldfried, Carlo; Escorcia, Orlando; Berry, Ivan, Ultraviolet assisted pore sealing of porous low k dielectric films.
  44. van den Hoek, Willibrordus Gerardus Maria; Draeger, Nerissa S.; Humayun, Raashina; Hill, Richard S.; Sun, Jianing; Ray, Gary, VLSI fabrication processes for introducing pores into dielectric materials.
  45. van den Hoek, Willibrordus Gerardus Maria; Draeger, Nerissa S.; Humayun, Raashina; Hill, Richard S.; Sun, Jianing; Ray, Gary William, VLSI fabrication processes for introducing pores into dielectric materials.
  46. van den Hoek,Willibrordus Gerardus Maria; Draeger,Nerissa S.; Humayun,Raashina; Hill,Richard S.; Sun,Jianing; Ray,Gary William, VLSI fabrication processes for introducing pores into dielectric materials.
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