초록 ▼

The invention encompasses a method of treating a physical vapor deposition target. The target has a sputtering surface and a sidewall edge at a periphery of the sputtering surface. The method comprises pressing a tool against the sidewall edge to form a distribution of imprints in the sidewall edge

The invention encompasses a method of treating a physical vapor deposition target. The target has a sputtering surface and a sidewall edge at a periphery of the sputtering surface. The method comprises pressing a tool against the sidewall edge to form a distribution of imprints in the sidewall edge of the target. The tool is then removed from the sidewall edge, leaving the imprints extending into the sidewall edge. The invention also encompasses a physical vapor deposition target. The target includes a sputtering surface having an outer periphery, and a sidewall edge along the outer periphery of the sputtering surface. The sidewall edge has a repeating pattern of imprints extending therein.

대표청구항 ▼

1. A physical vapor deposition target comprising: a sputtering surface having an outer periphery; and a sidewall edge along the outer periphery of the sputtering surface; the sidewall edge having a repeating pattern of imprints extending therein. 2. The physical vapor deposition target of clai

1. A physical vapor deposition target comprising: a sputtering surface having an outer periphery; and a sidewall edge along the outer periphery of the sputtering surface; the sidewall edge having a repeating pattern of imprints extending therein. 2. The physical vapor deposition target of claim 1 comprising a metallic material. 3. The physical vapor deposition target of claim 1 comprising titanium. 4. The physical vapor deposition target of claim 1 comprising a ceramic material. 5. The physical vapor deposition target of claim 1 being joined to a backing plate; wherein the backing plate has a sidewall coextensive with the sidewall of the physical vapor deposition target; and wherein imprints are not in the backing plate sidewall. 6. The physical vapor deposition target of claim 1 being joined to a backing plate; wherein the backing plate has a sidewall coextensive with the sidewall of the physical vapor deposition target; and wherein imprints are in the backing plate sidewall. 7. The physical vapor deposition target of claim 1 wherein the outer periphery is circular, wherein the sidewall extends entirely around the circular outer periphery, and wherein the repeating pattern extends entirely around the circular outer periphery. 8. The physical vapor deposition target of claim 1 wherein the sidewall joins the sputtering surface through a faceted corner. 9. The physical vapor deposition target of claim 8 wherein the faceted corner comprises a facet region extending between the sidewall and the sputtering surface, and wherein imprints are not extending into said facet region. 10. The physical vapor deposition target of claim 1 wherein the imprints are in the form of approximately diamond shapes. 11. The physical vapor deposition target of claim 1 wherein the repeating pattern of imprints comprises knurling.