IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0649752
(2000-08-28)
|
발명자
/ 주소 |
- Ghantous, Dania I.
- Chaloner-Gill, Benjamin
- Chiruvolo, Shivkumar
- Banfol, Devendra R.
- McGovern, William E.
- Cornell, Ronald M.
- Hoang, Khanh
- Pinoli, Allison A.
|
출원인 / 주소 |
|
대리인 / 주소 |
Patterson, Thuente, Skaar & Christensen P.A.
|
인용정보 |
피인용 횟수 :
21 인용 특허 :
34 |
초록
▼
Improved high rate batteries based on silver vanadium oxide yield improved pulsed performance. In particular, batteries comprise an electrolyte having lithium ions and a cathode comprising silver vanadium oxide. Improved batteries have a pulsed specific energy of at least about 575 mWh/g when pulsed
Improved high rate batteries based on silver vanadium oxide yield improved pulsed performance. In particular, batteries comprise an electrolyte having lithium ions and a cathode comprising silver vanadium oxide. Improved batteries have a pulsed specific energy of at least about 575 mWh/g when pulsed in groups of four-10 second pulses at a current density of 25 mA/cm2spaced by 15 seconds between pulses and with 30 minutes between pulse groups down to a discharge voltage of 1.5 volts. In addition, improved batteries can achieve high maximum specific powers, high current densities and no voltage delay in pulsed operation. The batteries are particularly suitable for use in implantable medical devices, such as, defibrillators, pacemakers or combinations thereof. Improved processing approaches are described.
대표청구항
▼
Improved high rate batteries based on silver vanadium oxide yield improved pulsed performance. In particular, batteries comprise an electrolyte having lithium ions and a cathode comprising silver vanadium oxide. Improved batteries have a pulsed specific energy of at least about 575 mWh/g when pulsed
Improved high rate batteries based on silver vanadium oxide yield improved pulsed performance. In particular, batteries comprise an electrolyte having lithium ions and a cathode comprising silver vanadium oxide. Improved batteries have a pulsed specific energy of at least about 575 mWh/g when pulsed in groups of four-10 second pulses at a current density of 25 mA/cm2spaced by 15 seconds between pulses and with 30 minutes between pulse groups down to a discharge voltage of 1.5 volts. In addition, improved batteries can achieve high maximum specific powers, high current densities and no voltage delay in pulsed operation. The batteries are particularly suitable for use in implantable medical devices, such as, defibrillators, pacemakers or combinations thereof. Improved processing approaches are described. ent in an amount which is superstoichiometric with respect to said first multicomponent material. 17. The method of claim 1, wherein said second multicomponent material has the identical volatile components as said first multicomponent material. 18. The method of claim 1, wherein said film has a thickness of about 100 angstroms to 100 μm. 19. The method of claim 1, wherein said annealing is performed at a temperature of from about 30% of the melting temperature of said first multicomponent material up to the melting temperature of said first multicomponent material. 20. The method of claim 19, wherein said annealing is performed at a temperature below a melting temperature of the substrate and below a temperature at which said first multicomponent material reacts with said substrate. 21. The method of claim 1, wherein said substrate is a semiconductor, insulator, or a metal, and is amorphous or crystalline. 22. The method of claim 1, wherein said substrate is completely enclosed with said vessel during said annealing. 23. The method of claim 22, wherein the enclosing of said substrate within said vessel comprises: laying said substrate within a pocket formed in a first portion of said vessel so as to leave at least a portion of a surface of said substrate, with said film thereon, exposed; and placing a second portion of said vessel over said first portion of said vessel so as to surround said substrate having said film thereon. 24. The method of claim 23, wherein said second portion of said vessel includes a pocket that, when said vessel surrounds said substrate, the pocket of said second vessel registers with the pocket of said first vessel to form a cavity housing said substrate. 25. The method of claim 24, wherein said cavity has a volume of no greater than 200 percent of the volume of said substrate having said film thereon. 26. The method of claim 25, wherein said cavity has a volume about equal to that of said substrate having said film thereon. 27. The method of claim 1, wherein said annealing is performed within a reactive atmosphere or a non-reactive atmosphere. 28. The method of claim 23, wherein said atmosphere is oxidizing or reducing. 29. The method of claim 27, wherein said atmosphere consists of nitrogen, oxygen, hydrogen, rare gas, or a mixture thereof, or is a mixture comprising nitrogen, oxygen, hydrogen, or a rare gas. 30. A method of reducing electrical losses at microwave and millimeter wave frequencies in a dielectric firm, comprising the steps of: enclosing a substrate having a multicomponent film thereon within a vessel, said multicomponent film being formed of a first multicomponent material, said vessel being formed of a second multicomponent material, said second multicomponent material comprising at least all volatile components of said first multicomponent material; and annealing said multicomponent film within said vessel for a time sufficient to anneal said multicomponent film; wherein said vessel is formed of said second multicomponent material such that, during said step of annealing at said temperature, said multicomponent film remains in contact with a vapor of said first multicomponent material and said second multicomponent material, said vapor preventing said multicomponent film from losing components of said first multicomponent material during said step of annealing; and wherein said film is a dielectric film. 31. The method of claim 30, wherein said dielectric film has a thickness of about 100 angstroms to 100 μm. 32. The method of claim 1, wherein said annealing step increases the average grain size by at least 3 times that of a starting grain size prior to said anneal step. 33. The method of claim 32, wherein said annealing increases the average grain size by at least 3.5 times that of the starting grain size. 34. The method of claim 33, wherein said annealing increases the average grain size by at least 4 times that of the starting grain size.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.