초록 ▼

The invention provides a process to increase the reliability of BEOL interconnects. The process comprises forming an array of conductors on a dielectric layer on a wafer substrate, polishing the upper surface so that the surfaces of the conductors are substantially co-planar with the upper surface o

The invention provides a process to increase the reliability of BEOL interconnects. The process comprises forming an array of conductors on a dielectric layer on a wafer substrate, polishing the upper surface so that the surfaces of the conductors are substantially co-planar with the upper surface of the dielectric layer, forming an alloy film on the upper surfaces of the conductors, and brush cleaning the upper surfaces of the conductors and the dielectric layer.

대표청구항 ▼

1. A process to increase the reliability of Cu-BEOL interconnects comprising: forming an array of conductors on a dielectric layer on a wafer substrate; polishing the upper surface of said conductors so that said upper surface of said conductors is substantially co-planar with the upper surface

1. A process to increase the reliability of Cu-BEOL interconnects comprising: forming an array of conductors on a dielectric layer on a wafer substrate; polishing the upper surface of said conductors so that said upper surface of said conductors is substantially co-planar with the upper surface of said dielectric layer; forming an alloy film on said upper surface of said conductors; providing an amount of an acid-free surfactant solution to said upper surface; and brush cleaning the upper surfaces of said conductor and of said dielectric layer. 2. The process of claim 1 wherein the conductors comprise copper or copper alloys. 3. The process of claim 1 wherein the alloy film is formed by electroless deposition. 4. The process of claim 1 wherein the alloy film comprises a cobalt phosphorus ternary. 5. The process of claim 1 wherein the alloy film comprises CoWP. 6. The process of claim 1 wherein the alloy film comprises CoSnP. 7. The process of claim 1 wherein the alloy film elements selected from the group consisting of Cu, Co, W, P, and Au. 8. The process of claim 1 wherein the alloy film has a thickness of from about 75 angstroms to about 100 angstroms. 9. The process of claim 1 wherein brush cleaning comprises: providing a set of rotating roller brushes comprising an upper brush and a lower brush each said brush having bristles wherein said bristles comprise soft polymer fibers, and wherein said upper and said lower brush are contacted such that said bristles of said brushes flex by about 1 millimeter; wetting the surface of said wafer with said surfactant solution; and rotating said wafer while passing said wafer between said set of roller brushes. 10. The process of claim 9 wherein said surfactant solution comprises surfactant and wherein the solvent of said solution is selected from the group consisting of water and alcohol. 11. The process of claim 9 wherein said surfactant is non-ionic or anionic. 12. The process of claim 9 wherein said surfactant is selected from the group consisting of FC95 and FC98. 13. The process of claim 9 wherein the brushes comprise polyvinyl alcohol fibers. 14. The process of claim 9 wherein the brushes rotate at a speed from about 30 RPM to about 50 RPM. 15. The process of claim 9 wherein the wafer is rotated at a speed from about 10 RPM to about 25 RPM. 16. The process of claim 9 wherein said wafer is rotated at a speed of about 18 RPM.