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Light sensors having a wide dynamic range are used in a variety of applications. A wide dynamic range light sensor includes an exposed photodiode light transducer accumulating charge in proportion to light incident over an integration period. Sensor logic determines a light integration period prior

Light sensors having a wide dynamic range are used in a variety of applications. A wide dynamic range light sensor includes an exposed photodiode light transducer accumulating charge in proportion to light incident over an integration period. Sensor logic determines a light integration period prior to the beginning of integration and the charge is reset. Charge accumulated by the exposed light transducer over the light integration period is measured and a pulse having a width based on the accumulated charge is determined.

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Light sensors having a wide dynamic range are used in a variety of applications. A wide dynamic range light sensor includes an exposed photodiode light transducer accumulating charge in proportion to light incident over an integration period. Sensor logic determines a light integration period prior

Light sensors having a wide dynamic range are used in a variety of applications. A wide dynamic range light sensor includes an exposed photodiode light transducer accumulating charge in proportion to light incident over an integration period. Sensor logic determines a light integration period prior to the beginning of integration and the charge is reset. Charge accumulated by the exposed light transducer over the light integration period is measured and a pulse having a width based on the accumulated charge is determined. d at least one power pad through said power supply line; and wherein said reference voltage generating circuit includes a second amplifier having an input terminal and an output terminal, said capacitance device being coupled to said input terminal, said reference voltage being output from said output terminal, wherein said power supply line comprises a first wiring layer and a second wiring layer, said first wiring layer provided along an edge of the semiconductor chip in a region outside of where a signal input pad is formed on the semiconductor chip on which a receiving circuit including said first amplifier and said second amplifier are formed; wherein said second wiring layer extends to the input terminal of said second amplifier; and wherein said capacitance device is formed by placing a pad, which is connected to said second amplifier and is comprised in said second wiring layer different from said first wiring layer, in such a manner as to face opposite to an extended section of said power supply line extended to the input terminal of said second amplifier with an insulating film intermediate between said pad and said extended section of said power supply line. 6. An optical interconnection receiving module comprising: a plurality of photodiodes, each of which receives an optical signal on a channel and converts the optical signal into an electrical signal; at least one power pad; a power supply line coupled to said at least one power pad; and a plurality of sets, each set comprising: a first amplifier for amplifying the electrical signal converted by one of said photodiodes; a determining circuit for determining the signal amplified by said first amplifier based on a reference voltage, a reference voltage generating circuit for generating the reference voltage, and a capacitance device formed between said reference voltage generating circuit and said at least one power pad, wherein each of said plurality of sets of said first amplifier, said determining circuit, said reference voltage generating circuit and said capacitance device are formed on a single semiconductor chip along with said power supply line and said at least one power pad, and wherein each of said first amplifier and said reference voltage generating circuit are electrically connected to said at least one power pad through said power supply line, and wherein said reference voltage generating circuit includes a second amplifier having an input terminal and an output terminal, said capacitance device being coupled to said input terminal, said reference voltage being output from said output terminal; wherein as a semiconductor chip on which a receiving circuit including said first amplifier and second amplifier is formed, an SOI substrate is used that includes a multi-layer structure of a substrate, an insulating film, and a semiconductor layer, said semiconductor layer being provided where the receiving circuit is formed; and wherein a first supply voltage terminal is connected to said substrate, and a second supply voltage terminal is connected to a semiconductor region where devices comprising said receiving circuit are formed; wherein the capacitance device formed between said semiconductor region and said substrate is configured to function as a bypass capacitor. 7. An optical interconnection receiving module as claimed in claim 5, wherein as the semiconductor chip on which the receiving circuit including said first amplifier and said second amplifier is formed, an SOI substrate is used that includes a multi-layer structure of a substrate, an insulating film, and a semiconductor layer, said semiconductor layer being provided where the receiving circuit is formed; and wherein a first supply voltage terminal is connected to said substrate, and a second supply voltage terminal is connected to a semiconductor region where devices comprising said receiving circuit are formed; whereby the capacitance formed between said semicon ductor region and said substrate is configured to function as a bypass capacitor. 8. An optical interconnection receiving module as claimed in claim 2, wherein said first amplifier and said second amplifier are formed by a current-input and voltage-output type amplifier circuit comprising: a grounded-emitter type bipolar transistor with the base terminal thereof connected to a signal input terminal; a collector resistance connected between the collector terminal of said transistor and a first supply voltage terminal; an emitter-follower transistor with the base thereof connected to the collector terminal of said transistor; an emitter resistance connected between the emitter terminal of said emitter-follower transistor and a second supply voltage terminal; and a feedback resistance connected between the emitter terminal of said emitter-follower transistor and said signal input terminal. 9. An optical interconnection receiving module as claimed in claim 3, wherein said first amplifier and said second amplifier are formed by a current-input and voltage-output type amplifier circuit comprising: a grounded-emitter type bipolar transistor with the base terminal thereof connected to a signal input terminal; a collector resistance connected between the collector terminal of said transistor and a first supply voltage terminal; an emitter-follower transistor with the base thereof connected to the collector terminal of said transistor; an emitter resistance connected between the emitter terminal of said emitter-follower transistor and a second supply voltage terminal; and a feedback resistance connected between the emitter terminal of said emitter-follower transistor and said signal input terminal. 10. An optical interconnection receiving module as claimed in claim 5, wherein said first amplifier and said second amplifier are formed by a current-input and voltage-output type amplifier circuit comprising: a grounded-emitter type bipolar transistor with the base terminal thereof connected to a signal input terminal; a collector resistance connected between the collector terminal of said transistor and a first supply voltage terminal; an emitter-follower transistor with the base thereof connected to the collector terminal of said transistor; an emitter resistance connected between the emitter terminal of said emitter-follower transistor and a second supply voltage terminal; and a feedback resistance connected between the emitter terminal of said emitter-follower transistor and said signal input terminal. 11. An optical interconnection receiving module as claimed in claim 6, wherein said first amplifier and said second amplifier are formed by a current-input and voltage-output type amplifier circuit comprising: a grounded-emitter type bipolar transistor with the base terminal thereof connected to a signal input terminal; a collector resistance connected between the collector terminal of said transistor and a first supply voltage terminal; an emitter-follower transistor with the base thereof connected to the collector terminal of said transistor; an emitter resistance connected between the emitter terminal of said emitter-follower transistor and a second supply voltage terminal; and a feedback resistance connected between the emitter terminal of said emitter-follower transistor and said signal input terminal. 12. An optical interconnection receiving module as claimed in claim 8, wherein a microlens array with a plurality of lenses that are capable of collecting the light of a received optical signal for each photodiode and irradiating the photodiode with the light is provided in the proximity of said photodiode array. 13. An optical interconnection receiving module as claimed in claim 9, wherein a microlens array with a plurality of lenses that are capable of collecting the light of a received optical signal for each photodiode and irradiating the photodiode with the light is provided in the proximity of said photodiode array. 14. An optical interconnection receiving module as claimed in claim 10, wherein a microlens array with a plurality of lenses that are capable of collecting the light of a received optical signal for each photodiode and irradiating the photodiode with the light is provided in the proximity of said photodiode array. 15. An optical interconnection receiving module as claimed in claim 11, wherein a microlens array with a plurality of lenses that are capable of collecting the light of a received optical signal for each photodiode and irradiating the photodiode with the light is provided in the proximity of said photodiode array. 16. An optical interconnection receiving module as claimed in claim 12, wherein a fiber fixing section for fixing one end of an optical fiber is provided for said microlens array in one section of a package where said photodiode array and said receiving circuit are mounted. 17. An optical interconnection receiving module as claimed in claim 13, wherein a fiber fixing section for fixing one end of an optical fiber is provided for said microlens array in one section of a package where said photodiode array and said receiving circuit are mounted. 18. An optical interconnection receiving module as claimed in claim 14, wherein a fiber fixing section for fixing one end of an optical fiber is provided for said microlens array in one section of a package where said photodiode array and said receiving circuit are mounted. 19. An optical interconnection receiving module as claimed in claim 15, wherein a fiber fixing section for fixing one end of an optical fiber is provided for said microlens array in one section of a package where said photodiode array and said receiving circuit are mounted. 20. An optical interconnection receiving module as claimed in claim 4, wherein a first one of said at least one power pad and a second one of said at least one power pad are formed such that the first one of said at least one power pad is formed on one side of said power supply line and the second one of said at least one power pad is formed on the other side of said power supply line.