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A method of converting a hydrophobic surface of a silicon carbide layer to a hydrophilic surface is described. That method comprises forming a silicon carbide containing layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophob

A method of converting a hydrophobic surface of a silicon carbide layer to a hydrophilic surface is described. That method comprises forming a silicon carbide containing layer on a substrate, then operating a PECVD reactor to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface. Also described is a method for making a semiconductor device that employs this technique.

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1. A method of forming a semiconductor device comprising: forming on a substrate a silicon carbide containing layer; introducing into a plasma enhanced chemical vapor deposition reactor, which contains the substrate that is covered with the silicon carbide containing layer, a gas that is selecte

1. A method of forming a semiconductor device comprising: forming on a substrate a silicon carbide containing layer; introducing into a plasma enhanced chemical vapor deposition reactor, which contains the substrate that is covered with the silicon carbide containing layer, a gas that is selected from the group consisting of oxygen, nitrogen, argon, hydrogen, xenon, krypton, nitrous oxide, carbon monoxide, and carbon dioxide; striking a plasma at RF power of between about 100 and about 3000 watts to convert the surface of the silicon carbide containing layer from a hydrophobic surface to a hydrophilic surface; depositing a sacrificial light absorbing material, which is selected from the group consisting of a dyed spin-on-glass and a dyed spin-on-polymer, on the surface of the silicon carbide containing layer after the silicon carbide containing layer has been exposed to the plasma; and then depositing a layer of photoresist on the surface of the sacrificial light absorbing material. 2. The method of claim 1 wherein the reactor is first operated to form the silicon carbide containing layer on the substrate, then operated to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface while the substrate remains in situ inside the reactor. 3. The method of claim 1 wherein the silicon carbide containing layer is exposed to the plasma for between about 0.5 seconds and about 20 seconds. 4. A method of forming a semiconductor device comprising: forming on a substrate a silicon carbide hard masking layer; introducing into a plasma enhanced chemical vapor deposition reactor, which contains the substrate that is covered with the silicon carbide hard masking layer, helium and a gas that is selected from the group consisting of oxygen, nitrogen, argon, hydrogen, xenon, krypton, nitrous oxide, carbon monoxide, and carbon dioxide; striking a plasma at RF power of between about 100 and about 3000 watts to convert the surface of the silicon carbide hard masking layer from a hydrophobic surface to a hydrophilic surface; depositing a sacrificial light absorbing material, which is selected from the group consisting of a dyed spin-on-glass and dyed spin-on-polymer, on the surface of the silicon carbide hard masking layer after it has been exposed to the plasma; and then depositing a layer of photoresist on the sacrificial light absorbing material. 5. The method of claim 4 wherein the reactor is first operated to form the silicon carbide hard masking layer on the substrate, then operated to generate a plasma that converts the surface of that layer from a hydrophobic surface to a hydrophilic surface while the substrate remains in situ inside the reactor. 6. The method of claim 4 wherein the silicon carbide hard masking layer is exposed to the plasma for between about 0.5 seconds and about 20 seconds.