IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0889839
(2001-10-30)
|
우선권정보 |
DE-0002209 (1999-01-21) |
발명자
/ 주소 |
- Franke, Steffen
- Torno, Oskar
- Heinstein, Axel
- Kluth, Carsten
- Haeming, Werner
- Baeuerle, Michael
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
17 인용 특허 :
5 |
초록
▼
A device for suppressing engine knocks in an internal combustion engine, using a detection device for the detection of the respective operating parameters of the internal combustion engine; a control unit for determining manipulated variables for the injection and ignition on the basis of the acquir
A device for suppressing engine knocks in an internal combustion engine, using a detection device for the detection of the respective operating parameters of the internal combustion engine; a control unit for determining manipulated variables for the injection and ignition on the basis of the acquired operating parameters; a dynamic phase detection device for acquiring a dynamic phase of the internal combustion engine; and a correction device for correcting the manipulated variables for the ignition, which is constructed so that for knock suppression, the ignition control quantity, given a dynamic phase acquired by the dynamic phase detection device, can be adjusted in the late direction by a dynamic lead that is dependent on a predicted load difference, and at the end of the dynamic phase can be brought step-by-step back to the manipulated variable determined by the control unit.
대표청구항
▼
A device for suppressing engine knocks in an internal combustion engine, using a detection device for the detection of the respective operating parameters of the internal combustion engine; a control unit for determining manipulated variables for the injection and ignition on the basis of the acquir
A device for suppressing engine knocks in an internal combustion engine, using a detection device for the detection of the respective operating parameters of the internal combustion engine; a control unit for determining manipulated variables for the injection and ignition on the basis of the acquired operating parameters; a dynamic phase detection device for acquiring a dynamic phase of the internal combustion engine; and a correction device for correcting the manipulated variables for the ignition, which is constructed so that for knock suppression, the ignition control quantity, given a dynamic phase acquired by the dynamic phase detection device, can be adjusted in the late direction by a dynamic lead that is dependent on a predicted load difference, and at the end of the dynamic phase can be brought step-by-step back to the manipulated variable determined by the control unit. the shield being characterized by a thickness dimension extending in a direction between the selected area of the second electrode and the plasma; wherein said thickness of the shield is at least 5 mm. 2. Apparatus according to claim 1, wherein the first electrode is adapted to recieve a semiconductor substrate mounted on the first electrode. 3. Apparatus according to claim 1, wherein: the second electrode is connected to an electrical ground; and the RF power supply is connected between the first electrode and the electrical ground, so that the electrical ground connects the RF power supply to the second electrode. 4. Apparatus according to claim 1, wherein the dielectric shield has a substantially higher thermal conductivity than quartz. 5. Apparatus according to claim 1, wherein said thickness of the shield is in the range of 5 mm to 20 mm, inclusive. 6. Apparatus according to claim 1, wherein said selected area of the second electrode that is covered by the shield is large enough so that the DC bias voltage is more positive than it would be if the dielectric shield were absent from the chamber. 7. Plasma process apparatus for fabricating semiconductor devices, comprising: a plasma chamber having first and second electrodes, wherein the two electrodes are electrically insulated from each other, and wherein the second electrode includes an electrically conductive wall of the chamber; an RF power supply connected between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode; and a dielectric shield mounted between the first and second electrodes; wherein the dielectric shield has a surface mounted adjacent to, and a non-zero distance from, the second electrode, said surface being characterized by an area; and wherein both said distance and said area are large enough so that the DC bias voltage is more positive than it would be if the dielectric shield were absent from the chamber. 8. Apparatus according to claim 7, wherein the first electrode is adapted to receive a semiconductor substrate mounted on the first electrode. 9. Apparatus according to claim 7, wherein said distance between the shield and the second electrode is small enough to prevent the formation of a plasma between the shield and the second electrode. 10. Apparatus according to claim 7, wherein: the second electrode is connected to an electrical ground; and the RF power supply is connected between the first electrode and the electrical ground, so that the electrical ground connects the RF power supply to the second electrode. 11. Apparatus according to claim 7, wherein the dielectric shield has a substantially higher thermal conductivity than quartz. 12. Plasma process apparatus for fabricating semiconductor devices, comprising: a plasma chamber having first and second electrodes, wherein the two electrodes are electrically insulated from each other, and wherein the second electrode includes an electrically conductive wall of the chamber; and a dielectric shield mounted between the first and second electrodes; wherein the dielectric shield is mounted adjacent to, and a non-zero distance from, a selected area of the second electrode. 13. Apparatus according to claim 12, wherein the first electrode is adapted to receive a semiconductor substrate mounted on the first electrode. 14. Apparatus according to claim 12, wherein the dielectric shield has a substantially higher thermal conductivity than quartz. 15. Apparatus according to claim 12, further comprising: an RF power supply connected between the first electrode and the second electrode so as to create a DC bias voltage at the first electrode relative to the second electrode; wherein both said distance and said selected area are large enough so that the DC bias voltage is more positive than it would be if the dielectric shield were absent from the chamber. 16. Apparatus according to claim 12, f
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