초록 ▼

A container and closure assembly, which includes a container and a container cap. The container cap is attached to the neck of the container through the use of an annual securing ring, which is incorporated into the cap and approximates the securing ring in the neck of the bottle and is press fit ov

A container and closure assembly, which includes a container and a container cap. The container cap is attached to the neck of the container through the use of an annual securing ring, which is incorporated into the cap and approximates the securing ring in the neck of the bottle and is press fit over the neck of the bottle. The opening of the container is covered with a section of cap that extends some distance into the neck of the container. The container is sealed at the surfaces where the inside of the container neck, the lip of the container neck and the outside of the container neck come in contact with the container cap. The contents of the bottle can be dispensed from the inverted position by rotating the container cap circumferentially with respect to the neck of the container. The circumferential motion causes the offset tool in the neck of the bottle to engaged the engagement ring in the base of the container cap thereby causing the container cap diaphragm to shear away from the container cap main body along the annular strain relief between the container cap diaphragm and the main body of the container cap.

대표청구항 ▼

A container and closure assembly, which includes a container and a container cap. The container cap is attached to the neck of the container through the use of an annual securing ring, which is incorporated into the cap and approximates the securing ring in the neck of the bottle and is press fit ov

A container and closure assembly, which includes a container and a container cap. The container cap is attached to the neck of the container through the use of an annual securing ring, which is incorporated into the cap and approximates the securing ring in the neck of the bottle and is press fit over the neck of the bottle. The opening of the container is covered with a section of cap that extends some distance into the neck of the container. The container is sealed at the surfaces where the inside of the container neck, the lip of the container neck and the outside of the container neck come in contact with the container cap. The contents of the bottle can be dispensed from the inverted position by rotating the container cap circumferentially with respect to the neck of the container. The circumferential motion causes the offset tool in the neck of the bottle to engaged the engagement ring in the base of the container cap thereby causing the container cap diaphragm to shear away from the container cap main body along the annular strain relief between the container cap diaphragm and the main body of the container cap. et al., "A Comparative Study of Near-Surface Effects Due to Very High Fluence H+ Implantation in Single Crystal FZ, CZ, and Web SI," Mat. Res. Soc. Symp. Proc., 27:359-364 (1984). Chu et al. "Plasma Immersion Ion Implantation--A Fledgling Technique for Semiconductor Processing," Materials Science and Engineering Reports: A Review Journal, R17(6-7): 207-280 (1996) cover page and table of contents only. Chu et al., "Recent Applications of Plasma Immersion Ion Implantation," Semiconductor International, pp. 165-172 (1996). Chu, Paul K., "Synthesis of SOI Materials Using Plasma Immersion Ion Implantation," 1997 Mat. Res. Soc. Symp. Proc., 438:333-343 (1997). Corbett et al., "Embrittlement of Materials: Si(H) as a Model System," J. Nuc. Mtrls., 169: 179-184 (1989). Grovenor, C.R.M., Microelectronic Materials, pp. 73-75 (1989). Hulett, D.M. et al., "Ion Nitriding and Ion Implantation: A Comparison," Metal Progress, pp. 18-21 (1985). I.B.M. Technical Disclosure Bulletin, vol. 29: No. 3, p. 1416 (Aug. 1986). Johnson et al., "Hydrogen-Induced Platelets in Silicon: Separation of Nucleation and Growth," Mtrls. Sci. Forum, 83-87:33-38 (1992). Lee et al., "A Novel Pattern Transfer Process for Bonded SOI Giga-bit DRAMS," 1996 IEEE Intl. SOI Conference Proceedings, IEEE Electron Devices Society, (1996). Li, J., "Novel Semiconductor Substrate Formed by Hydrogen Ion Implantation into Silicon," Appl. Phys. Lett. 55(21):2223-2224 (1989). Lu et al., "SOI Material Technology Using Plasma Immersion Ion Implantation,"Proceedings 1996 IEEE International SOI Conference (Oct. 1996). Mahajan et al., Principles of Growth and Processing of Semiconductors, WCB McGraw-Hill, chapter 6, pp. 262-269. Matsuda et al., "Large Diameter Ion Beam Implantation System," Nuclear Instruments and Methods, B21:314-316 (1987). Milnes et al., "Peeled Film Technology for solar Cells," pp.338-341. Moreau, Wayne M., Semiconductor Lithography, Principles, Practices, and Materials, Plenum Press (1988). Oshima et al., "Defects in Si irradiated with D-T neutrons, D and He ions," J. Nuc. Mtrls., 179-181:947-950 (1991). Patent Abstracts of Japan, vol. 7, No. 107 (E-174),(May 11, 1993) JP-58-030145 (Feb. 22, 1983). Picraux et al., "Ion Implantation of Surfaces," Scientific American, 252(3):102-113 (1985). Reiner et al., "A New Low-Energy Ion Implanter for Bombardment of Cylindrical Surfaces," Vacuum, 35(12):577-578 (1985). Sioshansi, Piran, "Ion Beam Modification of Materials for Industry," Thin Solid Film, 118:61-71 (1984). Smith, D.L., Thin-Film Deposition, McGraw-Hill, Inc. pp. 185-196, 278-293. Sze, S.M., VLSI Technology, 2nd Edition, pp. 9-10, (1988). Tong, et al., "A `smarter-cut`approach to low temperature silicon layer transfer," Appl. Phys. Lett., 72(1):49-51 (1998). Tong et al., Semiconductor Wafer Bonding: Science and Technology, John Wiley & Sons, Inc., pp. 152-171. Wolf, Stanley Ph.D., Silicon Processing for the VLSI Era vol. 2, pp. 66-79, L