초록 ▼

Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the ca

Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the reaction crucible; and further comprises means for maintaining the carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the reaction crucible.

대표청구항 ▼

1. A method for producing a silicon carbide single crystal comprising continuously feeding a carbon raw material of a finely divided particle form onto a carbon raw material of a finely divided particle form whereby the carbon raw material is allowed to continuously react with the carbon raw materia

1. A method for producing a silicon carbide single crystal comprising continuously feeding a carbon raw material of a finely divided particle form onto a carbon raw material of a finely divided particle form whereby the carbon raw material is allowed to continuously react with the carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. 2. The method according to claim 1 wherein the carbon raw material is maintained at a temperature of 1,900° C. or higher. 3. The method according to claim 1 wherein the generated gas is passed through an additional carbon material to the seed crystal substrate, said additional carbon material being disposed midway along a path of the generated gas reaching the seed crystal substrate. 4. A method for producing a silicon carbide single crystal comprising allowing a silicon raw material to react with a carbon raw material in a reaction crucible to generate reaction gas, that reaches a seed crystal substrate on which a silicon carbide single crystal grows, characterized in that a silicon raw material of a finely divided particle form is continuously fed onto a carbon raw material of a finely divided form in the reaction crucible, said carbon material being maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas. 5. The method according to claim 4 wherein the carbon raw material is maintained at a temperature of 1,900° C. or higher. 6. The method according to claim 4 wherein the generated gas is passed through an additional carbon material to the seed crystal substrate, said additional carbon material being disposed midway along a path of the generated gas reaching the seed crystal substrate.