초록 ▼

A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a reactive gas. The object is heated to a temperat

A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a reactive gas. The object is heated to a temperature sufficient for reflow of the silicate glass. In one embodiment, the atmosphere contained within the processing chamber comprises steam in combination with a reactive gas. The reactive gas can be, for instance, hydrogen, oxygen, nitrogen, dinitrogen oxide, ozone, hydrogen peroxide, atomic and/or molecular hydrogen, or radicals or mixtures thereof.

대표청구항 ▼

A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a reactive gas. The object is heated to a temperat

A process for forming silicate glass layers on substrates is disclosed. A silicate glass layer is first deposited onto a substrate, such as a semiconductor wafer. The wafer is then placed in a thermal processing chamber and heated in the presence of a reactive gas. The object is heated to a temperature sufficient for reflow of the silicate glass. In one embodiment, the atmosphere contained within the processing chamber comprises steam in combination with a reactive gas. The reactive gas can be, for instance, hydrogen, oxygen, nitrogen, dinitrogen oxide, ozone, hydrogen peroxide, atomic and/or molecular hydrogen, or radicals or mixtures thereof. step of: after the step of removing the CxHy,forming an opening in the underlying insulating film to expose the substrate. 8. A semiconductor device manufacturing method according to claim 1, wherein the conductive substrate is a metal wiring. 9. A semiconductor device manufacturing method, comprising the steps of: forming a nitrogen containing insulating film, as an underlying insulating film, on a substrate; forming a silicon containing insulating film on a surface of the underlying insulating film to provide an interlayer insulating film that includes the underlying insulating film and the silicon containing insulating film; etching the silicon containing insulating film to form an opening extending to and exposing the underlying insulating film; contacting the silicon containing insulating film with an oxygen gas plasma to thus transform the silicon containing insulting film into a porous insulating film; contacting a surface of the interlayer insulating film and a wall surface of the opening with a plasma of one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas to thus form a first nitrogen containing insulating film as a surface layer at least on the wall surface of the opening; and etching the underlying insulating film via the opening to expose the substrate at a bottom portion of the opening. 10. A semiconductor device manufacturing method according to claim 9, wherein the step of forming th