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A thin brick panel system and method of forming a thin brick wall includes an expanded polystyrene foam panel having a plurality of laterally extending channels formed therein for receiving a plurality of thin brick units. The thin brick units are bonded with an adhesive directly to the foam panel a

A thin brick panel system and method of forming a thin brick wall includes an expanded polystyrene foam panel having a plurality of laterally extending channels formed therein for receiving a plurality of thin brick units. The thin brick units are bonded with an adhesive directly to the foam panel and the seams between adjacent brick are filled with a mortar that bonds to the foam panel. The foam panel may be attached to a substrate with an adhesive as well as fasteners. Strips of a mesh fabric may span several panels to bind the panels together to form a structurally sound thin brick wall.

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A thin brick panel system and method of forming a thin brick wall includes an expanded polystyrene foam panel having a plurality of laterally extending channels formed therein for receiving a plurality of thin brick units. The thin brick units are bonded with an adhesive directly to the foam panel a

A thin brick panel system and method of forming a thin brick wall includes an expanded polystyrene foam panel having a plurality of laterally extending channels formed therein for receiving a plurality of thin brick units. The thin brick units are bonded with an adhesive directly to the foam panel and the seams between adjacent brick are filled with a mortar that bonds to the foam panel. The foam panel may be attached to a substrate with an adhesive as well as fasteners. Strips of a mesh fabric may span several panels to bind the panels together to form a structurally sound thin brick wall. dulation unit for offsetting the principal bias voltage applied to said electroabsorption modulator to adjust the band gap wavelength of said electroabsorption modulator so that a constant Δλ is maintained for the oscillation wavelength being produced by said semiconductor laser selected and operated by said laser selection unit; and a controller for specifying, for said laser selection unit, the one of said plurality of semiconductor lasers to be operated, based on an external command specifying a wavelength of light to be produced, and for controlling operation of said temperature control unit and said offset bias control unit to maintain the constant wavelength difference Δλ. 2. The semiconductor laser device according to claim 1, wherein said laser unit, said coupling unit, and said optical modulation unit are integrated on a single semiconductor substrate as a semiconductor laser chip, and said temperature control unit controls temperature of said semiconductor laser chip. 3. The semiconductor laser device according to claim 1, wherein said laser unit, said coupling unit, and said optical modulation unit are packaged on a single substrate as a hybrid integrated circuit, and said temperature control unit controls temperature of said hybrid integrated circuit. 4. The semiconductor laser device according to claim 1, wherein said laser unit, said coupling unit, and said optical modulation unit are discrete modules, and said temperature control unit controls temperature of each of said modules. 5. The semiconductor laser device according to claim 1, wherein said electroabsorption modulator of said optical modulation unit has a light absorption layer with a multiquantum well structure. 6. The semiconductor laser device according to claim 1, wherein said electroabsorption modulator of said optical modulation unit has a light absorption layer with a strained multiquantum well structure. 7. A semiconductor laser device comprising: a laser unit having a single semiconductor laser including multiple electrodes and selectively oscillating at each of a plurality of different oscillation wavelengths depending upon relative currents supplied to the respective electrodes; an optical modulation unit having a single electroabsorption modulator for optically modulating laser light produced by said laser unit in response to an applied principal bias voltage, said electroabsorption modulator having a band gap wavelength varying with voltage applied to said electroabsorption modulator and differing by Δλ from the oscillation wavelength being produced by said semiconductor laser; a coupling unit coupling said laser unit and said optical modulation unit so that laser light from said laser unit is incident on said electroabsorption modulator; a temperature control unit for controlling, by heating and cooling, temperature of said laser unit and of said optical modulation unit; a wavelength selection and drive unit for driving said semiconductor laser of said laser unit at a selected one of the plurality of different wavelengths; an offset bias control unit for selective application of a selected offset bias voltage, of a plurality of fixed offset bias voltages, to said electroabsorption modulator of said optical modulation unit for offsetting the principal bias voltage applied to said electroabsorption modulator to adjust the band gap wavelength of said electroabsorption modulator so that a constant Δλ is maintained for oscillation wavelength being produced by said semiconductor laser; and a controller for specifying, for said wavelength selection and drive unit, the selected oscillation wavelength of said semiconductor laser, based on an external command specifying a wavelength of light to be produced, and for controlling operation of said temperature control unit and said offset bias control unit to maintain the constant wavelength difference Δλ. 8. The semiconductor laser device according to claim 7, wherein said laser u