초록 ▼

A semiconductor device which has trenches for raising the reliability thereof and a method for manufacturing such device. An electrode pad, and a protective film and an interlayer film which comprise an opening on top of this electrode pad, are formed on a substrate. A rewiring pattern which is in c

A semiconductor device which has trenches for raising the reliability thereof and a method for manufacturing such device. An electrode pad, and a protective film and an interlayer film which comprise an opening on top of this electrode pad, are formed on a substrate. A rewiring pattern which is in contact with the electrode pad at this opening is formed on top of the interlayer film. In addition, a trench is formed, by means of etching, in the region on this interlayer film where said rewiring pattern is not formed. A bump is formed on top of said rewiring pattern. The rewiring pattern and the trench are covered by means of a sealing film. The sealing film exposes the upper end of the bump. An external terminal is formed on the upper end of this bump. The trenches make the contact area between the covering film and the sealing film larger and therefore increase the adhesion between the covering film and the sealing film. The rougher the surface of the trench the better the adhesion between the covering film and the sealing film. Improving the adhesion makes it difficult for the sealing film to become detached so that the semiconductor device becomes more reliable.

대표청구항 ▼

A semiconductor device which has trenches for raising the reliability thereof and a method for manufacturing such device. An electrode pad, and a protective film and an interlayer film which comprise an opening on top of this electrode pad, are formed on a substrate. A rewiring pattern which is in c

A semiconductor device which has trenches for raising the reliability thereof and a method for manufacturing such device. An electrode pad, and a protective film and an interlayer film which comprise an opening on top of this electrode pad, are formed on a substrate. A rewiring pattern which is in contact with the electrode pad at this opening is formed on top of the interlayer film. In addition, a trench is formed, by means of etching, in the region on this interlayer film where said rewiring pattern is not formed. A bump is formed on top of said rewiring pattern. The rewiring pattern and the trench are covered by means of a sealing film. The sealing film exposes the upper end of the bump. An external terminal is formed on the upper end of this bump. The trenches make the contact area between the covering film and the sealing film larger and therefore increase the adhesion between the covering film and the sealing film. The rougher the surface of the trench the better the adhesion between the covering film and the sealing film. Improving the adhesion makes it difficult for the sealing film to become detached so that the semiconductor device becomes more reliable. ns include common ground or power contacts. 13. A method as in claim 1 wherein said underfill material comprises an epoxy polymer. 14. A method as in claim 1 wherein multiple devices are molded simultaneously as a single unit in each mold die cavity. 15. A method as in claim 1 wherein each cavity in the mold die includes a plurality of recesses for molding individual devices, and wherein the molded devices are physically separated by a section of flexible tape. 16. A method as in claim 1 wherein said plastic molding compound comprises an epoxy resin. 17. A method as in claim 1 wherein the packaged semiconductor device comprises a Chip Scale Package (CSP). 18. A method as in claim 14 wherein said device is less than 1 mm thick, and the sides and length are in the range of 0.25 to 0.5 mm greater than said chip dimensions.