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A technique for creating patterns of material deposited on a surface involves forming a self-assembled monolayer in a pattern on the surface and depositing, via chemical vapor deposition or via sol-gel processing, a material on the surface in a pattern complementary to the self-assembled monolayer p

A technique for creating patterns of material deposited on a surface involves forming a self-assembled monolayer in a pattern on the surface and depositing, via chemical vapor deposition or via sol-gel processing, a material on the surface in a pattern complementary to the self-assembled monolayer pattern. The material can be a metal, metal oxide, or the like. The surface can be contoured, including trenches or holes, the trenches or holes remaining free of self-assembled monolayer while the remainder of the surface is coated. When exposed to deposition conditions, metal or metal oxide is deposited in the trenches or holes, and remaining portions of the article surface remain free of deposition. The technique finds particular use in creation of conductive metal pathways selectively within holes passing from one side of a substrate to another.

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A technique for creating patterns of material deposited on a surface involves forming a self-assembled monolayer in a pattern on the surface and depositing, via chemical vapor deposition or via sol-gel processing, a material on the surface in a pattern complementary to the self-assembled monolayer p

A technique for creating patterns of material deposited on a surface involves forming a self-assembled monolayer in a pattern on the surface and depositing, via chemical vapor deposition or via sol-gel processing, a material on the surface in a pattern complementary to the self-assembled monolayer pattern. The material can be a metal, metal oxide, or the like. The surface can be contoured, including trenches or holes, the trenches or holes remaining free of self-assembled monolayer while the remainder of the surface is coated. When exposed to deposition conditions, metal or metal oxide is deposited in the trenches or holes, and remaining portions of the article surface remain free of deposition. The technique finds particular use in creation of conductive metal pathways selectively within holes passing from one side of a substrate to another. de. 11. The method of claim 10, wherein the barrier layer is deposited on said exposed electrode material prior to said deposition of said metal. 12. The method of claim 1, wherein said metal is a material of low resistivity selected from the group consisting of tungsten, aluminum, platinum, copper and gold. 13. The method of claim 1, wherein said metal is molybdenum. 14. The method of claim 1, wherein said removal of said second insulating film results in a cavity defined by said spacers and said exposed electrode material, and said cavity is completely filled when said formation of said metal layer has been complete. 15. The method of claim 14, wherein said cavity is completely filled with said metal. 16. The method of claim 14, wherein a barrier layer is deposited in said cavity prior to said deposition of said metal to form a barrier between said electrode material and said metal; and said cavity is completely filled with said metal and said barrier layer. 17. The method of claim 16, wherein the barrier layer is made of titanium nitride.