IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0948063
(2001-09-07)
|
우선권정보 |
EP-0810837 (2000-09-15) |
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Burns, Doane, Swecker & Mathis, L.L.P.
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
3 |
초록
▼
In a parallel circuit (10) comprising a plurality of high-power IGBTs (T1, . . . ,T3) which are each driven by a dedicated gate drive circuit (GD1,. . . ,GD3), each of the gate drive circuits (GD1,. . . ,GD3) having, at its output, a p-channel MOSFET (M1, M3, M5) and an n-channel MOSFET (M2, M4, M6)
In a parallel circuit (10) comprising a plurality of high-power IGBTs (T1, . . . ,T3) which are each driven by a dedicated gate drive circuit (GD1,. . . ,GD3), each of the gate drive circuits (GD1,. . . ,GD3) having, at its output, a p-channel MOSFET (M1, M3, M5) and an n-channel MOSFET (M2, M4, M6) in a push-pull arrangement and the outputs of the gate drive circuits (GD1, . . . ,GD3) being connected to the gates of the IGBTs (T1,. . . ,T3) in each case via a gate resistor (R1,. . . ,R3), a parallel circuit comprising more than two gate drive circuits is made possible by virtue of the fact that the outputs of the gate drive circuits (GD1,. . . ,GD3) are interconnected via a connecting line (11), and that the MOSFETs (M1,. . . ,M6) of the gate drive circuits (GD1,. . . ,GD3) are in each case connected to a positive or negative supply terminal (P1, . . . ,P3 or N1, . . . ,N3) via a constant-current source (CS1,. . . ,CS6).
대표청구항
▼
1. A parallel circuit comprising a plurality of high-power IGBTs which are each driven by a dedicated gate drive circuit, each of the gate drive circuits having, at its output, a p-channel MOSFET and an n-channel MOSFET in a push-pull arrangement and the outputs of the gate drive circuits being conn
1. A parallel circuit comprising a plurality of high-power IGBTs which are each driven by a dedicated gate drive circuit, each of the gate drive circuits having, at its output, a p-channel MOSFET and an n-channel MOSFET in a push-pull arrangement and the outputs of the gate drive circuits being connected to the gates of the IGBTs in each case via a gate resistor, wherein the outputs of the gate drive circuits are interconnected via a connecting line, and in that the MOSFETs of the gate drive circuits are in each case connected to a positive or negative supply terminal via a constant-current source . 2. The parallel circuit as claimed in claim 1, wherein the constant-current sources are constructed from a) a transistor or MOSFET, and b) diodes and/or resistors. 3. The parallel circuit as claimed in claim 1, wherein the positive and negative supply terminals of the gate drive circuits are respectively interconnected by connecting lines.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.