IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0683674
(2002-02-01)
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발명자
/ 주소 |
- Stopczynski, Lawrence Gerard
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출원인 / 주소 |
- Ford Global Technologies, Inc.
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
39 인용 특허 :
127 |
초록
▼
A method of performing passive countermeasures for an automotive vehicle (12) having a vehicle sensor complex (18) generating a vehicle sensor complex signal is provided. The method of performing passive countermeasures includes performing an accelerometer initiated passive countermeasure method and
A method of performing passive countermeasures for an automotive vehicle (12) having a vehicle sensor complex (18) generating a vehicle sensor complex signal is provided. The method of performing passive countermeasures includes performing an accelerometer initiated passive countermeasure method and performing a sensor fusion initiated passive countermeasure method. An object is detected with a sensor fusion (14) and an object parameter signal is generated. The object parameter signal is compared with an object parameter threshold level. The sensor fusion initiated passive countermeasure method is terminated when the object parameter signal is greater than the object parameter threshold level.
대표청구항
▼
A method of performing passive countermeasures for an automotive vehicle (12) having a vehicle sensor complex (18) generating a vehicle sensor complex signal is provided. The method of performing passive countermeasures includes performing an accelerometer initiated passive countermeasure method and
A method of performing passive countermeasures for an automotive vehicle (12) having a vehicle sensor complex (18) generating a vehicle sensor complex signal is provided. The method of performing passive countermeasures includes performing an accelerometer initiated passive countermeasure method and performing a sensor fusion initiated passive countermeasure method. An object is detected with a sensor fusion (14) and an object parameter signal is generated. The object parameter signal is compared with an object parameter threshold level. The sensor fusion initiated passive countermeasure method is terminated when the object parameter signal is greater than the object parameter threshold level. 217; US-5562383, 19961000, Iwai et al., 414/217; US-5570990, 19961100, Bonora et al., 414/543; US-5607009, 19970300, Turner et al., 165/048.1; US-5653565, 19970800, Bonora et al., 414/411; US-5664925, 19970900, Muka et al., 414/217; US-5695564, 19971200, Imihashi, 118/719; US-5810395, 19980900, Lee et al., 118/728; US-5842824, 19981200, Nishi, 414/416; US-5905302, 19990500, Lane et al., 257/678; US-5944940, 19990800, Toshima, 156/345; US-5950330, 19990900, Kato et al., 034/406; US-6026561, 20000200, Lafond, 029/722; US-6069096, 20000500, Nishihata et al., 438/905 e position; selecting an optimum threshold value having the largest rate of change around said measuring point; determining the first process parameter value corresponding to the optimum threshold value; and providing the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects. 9. The computer storage of claim 8, wherein the instructions further include calculating the modeled behavior values and their rates of change over a range of corresponding values of the first process parameter of a computer representation of a mask. 10. The computer storage of claim 8, wherein the instructions further include calculating the modeled behavior values and their rates of change over a range of corresponding values of the first process parameter representative of focus. 11. The computer storage of claim 8, wherein the instructions further include calculating the modeled behavior values and their rates of change over a range of corresponding values of the first process parameter representative of numerical aperture. 12. A computer storage for storing instructions for determining an optimum process point for fabricating a device feature of a critical dimension, the instructions comprising: selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension; calculating modeled behavior values and their rates of change over a range of corresponding mask material edge positions; and selecting an optimum threshold value having the largest rate of change around said measuring point. 13. The computer storage of claim 12, wherein the instructions further comprise determining the mask material edge position corresponding to the optimum threshold value. 14. The computer storage of claim 12, wherein the instructions further comprise: selecting a point on one side of the measuring point; calculating a value of the modeled behavior at each of the points; and calculating a slope through each of the points, wherein the slope is a function of the values of the modeled behavior at each point. 15. The computer storage of claim 12, wherein the instructions further comprise: shifting the mask material edge position by a first value; calculating the value of the modeled behavior at the measuring point; determining the value of the modeled behavior at a location offset from the measuring point in a first direction by a second value; determining the value of the modeled behavior at a location offset from the measuring point in a second direction, opposite the first direction, by the second value; and calculating the rate of change of the modeled behavior value corresponding to the mask material edge position. 16. The computer storage of claim 15, wherein the instructions include: calculating a difference of the modeled behavior values ascertained during determining the values of the modeled behavior; and dividing the difference of the modeled behavior values by twice the second value. 17. The computer storage of claim 15, wherein the instructions further comprise providing the optimum threshold value to a proximity effect correction process which modifies the mask material edge position to compensate for proximity effects. 18. A computer storage for storing instructions for determining an optimum process point for fabricating a device feature of a critical dimension, the instructions comprising: selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension; calculating modeled behavior values and their rates of change over a range of corresponding mask material edge positions, the calculating modeled behavior values and their rates of change including: shifting the mask material edge position by a first value; calculating the value of the modeled behavior at the measuring point; determining the value of the modeled behavior at a loc
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