Reverse osmosis liquid filter system with ultraviolet filtration
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B01D-027/08
B01D-027/14
B01D-035/30
B01D-061/02
출원번호
US-0179170
(2002-06-26)
발명자
/ 주소
Northcut, Donald A.
Northcut, Douglas W.
대리인 / 주소
Siemens Patent Services, LC
인용정보
피인용 횟수 :
4인용 특허 :
2
초록▼
The present invention provides a multi-element filtering system assuring serial filtration of a liquid through multiple filter cartridges while enabling flushing without requiring removal of the filter cartridges. Both conventional and reverse osmosis filtration is performed, sequentially, within th
The present invention provides a multi-element filtering system assuring serial filtration of a liquid through multiple filter cartridges while enabling flushing without requiring removal of the filter cartridges. Both conventional and reverse osmosis filtration is performed, sequentially, within the system. After filtration, the water is subjected to ultraviolet irradiation for purification. The filter cartridges are held within a canister which is pressed against the cap and constrained against rotation with the cap. The canister is divided into chambers, and has passages in its floor arranged to enable serial transfer of liquid from one chamber to the next. Flushing employs liquid introduced under normal pressure. Passages leading to the flush liquid outlet enable flushing to proceed when the flush liquid outlet is opened. At other times, filtered liquid will pass through passages leading to the filtered liquid outlet. Liquid is circulated to assure filtration even when flushing, so that contamination of filtered liquid is precluded.
대표청구항▼
The present invention provides a multi-element filtering system assuring serial filtration of a liquid through multiple filter cartridges while enabling flushing without requiring removal of the filter cartridges. Both conventional and reverse osmosis filtration is performed, sequentially, within th
The present invention provides a multi-element filtering system assuring serial filtration of a liquid through multiple filter cartridges while enabling flushing without requiring removal of the filter cartridges. Both conventional and reverse osmosis filtration is performed, sequentially, within the system. After filtration, the water is subjected to ultraviolet irradiation for purification. The filter cartridges are held within a canister which is pressed against the cap and constrained against rotation with the cap. The canister is divided into chambers, and has passages in its floor arranged to enable serial transfer of liquid from one chamber to the next. Flushing employs liquid introduced under normal pressure. Passages leading to the flush liquid outlet enable flushing to proceed when the flush liquid outlet is opened. At other times, filtered liquid will pass through passages leading to the filtered liquid outlet. Liquid is circulated to assure filtration even when flushing, so that contamination of filtered liquid is precluded. prising the steps of: immersing said semiconductor material in said etching electrolyte, wherein at least one surface of said semiconductor material contacts said etching electrolyte, until the open circuit potential of said semiconductor material reaches a steady state value; after the preceding step, negatively biasing said semiconductor material until the potential reaches minus 5 volts or more negative than minus 5 volts (SCE); and while negatively biasing said semiconductor material to a potential of minus 5 volts or more negative than minus 5 volts (SCE), illuminating at least part of said at least one surface of the semiconductor material which contacts said etching electrolyte with light selected from the group consisting of ultraviolet, visible, and infrared light. 12. A process according to claim 1, comprising the steps of: immersing said semiconductor material in said etching electrolyte, wherein at least one surface of said semiconductor material contacts said etching electrolyte, until the open circuit potential of said semiconductor material reaches from about minus 1.1 V or more negative than minus 1.1 V (SCE); after the preceding step, negatively biasing said semiconductor material until the potential reaches minus 5 volts or more negative than minus 5 volts (SCE); and while negatively biasing said semiconductor material to a potential of minus 5 volts or more negative than minus 5 volts (SCE), illuminating at least part of said at least one surface of the semiconductor material which contacts said etching electrolyte with light selected from the group consisting of ultraviolet, visible, and infrared light. 13. A process according to claim 1, wherein said semiconductor material is selected from the group consisting of the III-V and II-VI groups of semiconductors. 14. A process according to claim 1, wherein said semiconductor material is selected from the group consisting of silicon, germanium, gallium arsenide, and cadmium telluride. 15. A process according to claim 14, wherein said semiconductor material is p-type silicon or n-type silicon. 16. A process according to claim 1, wherein said etching electrolyte is an electrolyte which is a solution containing a solute selected from the group consisting of alkali hydroxides, alkali halogenides and hydrogen halogenide acids. 17. A process according to claim 16, wherein said solution is an aqueous solution. 18. A process according to claim 17, wherein said solute is selected from the group consisting of KOH, NaOH, NaCl, and HF. 19. A process according to claim 16, wherein said solution is a non-aqueous solution. 20. A process according to claim 19, wherein said non-aqueous solution is an alcoholic solution. 21. A process according to claim 1, wherein said etching electrolyte is a neutral aqueous solution which is not harmful to laboratory or industrial equipment, and is not harmful to the touch. 22. A process according to claim 1, wherein said etching electrolyte is a molten electrolyte. 23. A process according to claim 22, wherein said molten electrolyte is a molten salt. 24. A process according to claim 1, wherein a partly masked semiconductor material is illuminated with light having a wavelength of between about 250 and about 1500 nm. 25. A process according to claim 24, wherein source of the illuminating light is a tungsten-halogen bulb. 26. A process according to claim 24, wherein the source of the illuminating light is a dye laser. 27. A process according to claim 1, wherein a partly masked semiconductor material is illuminated with light of an intensity of at least 0.01 W/cm2. 28. A process according to claim 1, wherein said etching electrolyte is a solution at a temperature between its freezing point and its boiling point. 29. A process according to claim 28, wherein said solution is an aqueous solution. 30. A process according to claim 29, wherein the temperature is between about 25° C. and about 90° C. 31. A process according to
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이 특허에 인용된 특허 (2)
Northcut Donald A. ; Northcut Douglas W., Multi-element liquid filter system with flushing and filtering circuits.
Olson, Judd D.; McGreevy, Sean C.; Lageson, Kent E.; Kinzer, Kevin E.; Cobian, Paul J.; Hauble, Gretchen A.; Cooper, James M.; Williams, Benjamin P.; Marrs, Paula A.; Karahalios, Anastasios G.; Price, Carly R.; O'Leary, Jeremiah P.; Chang, Shu Kun; Kelly, Elizabeth R.; Ko, Hyun Jin, Water treatment cartridge.
Olson, Judd D.; McGreevy, Sean C.; Lageson, Kent E.; Kinzer, Kevin E.; Cobian, Paul J.; Hauble, Gretchen A.; Cooper, James M.; Williams, Benjamin P.; Marrs, Paula A.; Karahalios, Anastasios G.; Price, Carly R.; O'Leary, Jeremiah P.; Chang, Shu Kun; Kelly, Elizabeth R.; Ko, Hyun Jin, Water treatment device.
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