Pixel structure of an organic light-emitting diode display device and its fabrication method
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01J-001/62
H01J-009/00
출원번호
US-0803450
(2001-03-08)
발명자
/ 주소
Sheu, Chai-Yuan
Wang, Wen-Chun
Yeh, Yung-Hui
출원인 / 주소
Industrial Technology Research Institute
인용정보
피인용 횟수 :
39인용 특허 :
1
초록▼
A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitti
A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitting diodes or polymer light-emitting diodes as electroluminescent media. The low-temperature poly Si (LTPS) thin film transistors provide a current to the OLED device and serve as an active driving device. The color changing medium changes blue light into red or green light to form full-color OLED. The processing steps include the black matrix process, the island process, the gate process, the interlayer process, the color changing medium process, and the OLED deposition process. Because a color changing medium is integrated on the LTPS thin film transistors, this invention can make display devices of high resolution, high luminous efficiency and wide viewing angle.
대표청구항▼
A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitti
A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitting diodes or polymer light-emitting diodes as electroluminescent media. The low-temperature poly Si (LTPS) thin film transistors provide a current to the OLED device and serve as an active driving device. The color changing medium changes blue light into red or green light to form full-color OLED. The processing steps include the black matrix process, the island process, the gate process, the interlayer process, the color changing medium process, and the OLED deposition process. Because a color changing medium is integrated on the LTPS thin film transistors, this invention can make display devices of high resolution, high luminous efficiency and wide viewing angle. lectively acted upon in a localized region thereof by the plurality of streams. 9. The field emission device as set forth in claim 8, further comprising an address controller interconnected with at least one of the field emission cathodes and the gate structure that controls emission of electrons from the cathodes selectively according to a predetermined circuit design pattern whereby a corresponding pattern is produced the resist layer. 10. The field emission device as set forth in claim 1, wherein the plurality of field emission cathodes comprise groupings that correspond to a plurality of pixels and wherein the anode comprises a display for displaying the pixels. 11. The field emission device as set forth in claim 10, wherein the display is constructed and arranged to display at least 300,000 pixels. 12. The field emission device as set forth in claim 1, wherein each of the first dynode side and the second dynode side of the microchannel lain element are driven at a predetermined voltage and wherein a difference between the predetermined voltage oil each of the first dynode side and the second dynode side is in a range between approximately 600 and 1000 Volts. 13. The field emission device as set forth in claim 1, comprising at least 2,000,000 field emission cathodes. 14. The field emission device as set forth in claim 1 wherein each of the cathodes generates a current of the order of 1 picoamp. 15. The field emission device as set forth in claim 1 wherein each of the cathodes comprises a cluster of a plurality of cathode tips all aligned with a predetermined microchannel of the plurality of microchannels. 16. The field emission device as set forth in claim 1, wherein the plurality of field emission cathodes comprise groupings that correspond to electron beams used in a lithographic process and wherein the anode comprises a resist layer that is selectively exposed by the electron beams. 17. A method for inducing a current gain in a stream of electrons emitted by a field emission device comprising the steps of: emitting a stream of electrons having a first current from a field emission device; directing the stream of electrons having the first current into a microchannel of a microchannel gain element, the microchannel gain element having: (i) a first dynode side and an opposing, second dynode side, wherein each of the first and second dynode sides includes a conductive material thereon having a voltage difference therebetween, and (ii) a plurality of microchannels each having a secondary electronemissive layer therein and each located adjacent a field emission device; applying a driving voltage to the microchannel in which the stream of electrons having the first current is directed to generate a resulting stream of electrons that exits the microchannel having a second current that is greater than the first current; and striking an anode with the resulting stream of electrons having the second current. 18. The method as set forth in claim 17, wherein the step of striking includes exciting with the resulting stream of electrons, a visible light emission from a phosphor located on the anode. 19. The method as set forth in claim 18, wherein the step of exciting includes exciting a phosphor that emits a substantially greater visible light in response to contact by the resulting stream of electrons having the second Current than a visible light emission by the phosphor in response to contact by a stream of electrons having the first current. 20. The method as set forth in claim 17, wherein the step of striking includes exposing a resist layer on a lithographic substrate. 21. The method as set forth in claim 20, wherein the step of exposing includes focusing the stream with an electrostatic lens structure positioned between the microchannel gain element and the substrate. 22. The method as set forth in claim 21, further comprising, directing a plurality of streams of electrons through discrete microchannels of the mic
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이 특허에 인용된 특허 (1)
Tang Ching W. (Rochester NY) Hseih Biay C. (Pittsford NY), Method of fabricating a TFT-EL pixel.
Yamazaki, Shunpei; Hiroki, Masaaki; Murakami, Masakazu; Kuwabara, Hideaki, Light emitting device, method of preparing the same and device for fabricating the same.
Lee, Sohyung; Chang, Youngyoung; Park, Kwonshik; Kim, Mincheol; Yang, Jeongsuk, Thin film transistor substrate having a plurality of stacked storage capacitors.
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