초록 ▼

A flow-frame for forming a subassembly; said sub-assembly comprising a bipolar electrode and an ion-selective membrane mounted on said flow-frame and wherein said sub-assembly may be stacked together with other such subassemblies to create an array of electrochemical cells; wherein said flow-frame i

A flow-frame for forming a subassembly; said sub-assembly comprising a bipolar electrode and an ion-selective membrane mounted on said flow-frame and wherein said sub-assembly may be stacked together with other such subassemblies to create an array of electrochemical cells; wherein said flow-frame is formed from an electrically insulating material and comprises at least four manifold-defining portions which also define pathways for the passage of the anolyte/catholyte. Such pathway may define a labyrinthine path which may be spiral in shape between the manifold and the chamber entry/exit port.

대표청구항 ▼

A flow-frame for forming a subassembly; said sub-assembly comprising a bipolar electrode and an ion-selective membrane mounted on said flow-frame and wherein said sub-assembly may be stacked together with other such subassemblies to create an array of electrochemical cells; wherein said flow-frame i

A flow-frame for forming a subassembly; said sub-assembly comprising a bipolar electrode and an ion-selective membrane mounted on said flow-frame and wherein said sub-assembly may be stacked together with other such subassemblies to create an array of electrochemical cells; wherein said flow-frame is formed from an electrically insulating material and comprises at least four manifold-defining portions which also define pathways for the passage of the anolyte/catholyte. Such pathway may define a labyrinthine path which may be spiral in shape between the manifold and the chamber entry/exit port. e with a sweep velocity as a function of time that is determined by said first sweep velocity modulation recipe. 4. The method of claim 1, also including the step of: before step (a), producing the patterned wafer by performing a photoresist/lithographic operation on an unpatterned wafer having an unpatterned layer of photoresist, to produce said pattern of features in said layer. 5. A method for depositing a film on a substrate using a vapor deposition source having a flux distribution, including the steps of: (a) measuring the flux distribution by holding a patterned wafer stationary relative to the source while performing a vapor deposition operation in which the source deposits a test film of material on the wafer, then measuring the thickness of the test film as a function of position on the wafer, thereby generating data determining said flux distribution; (b) calculating a set of predicted film thickness profiles, each of the film thickness profiles assuming that the substrate is swept across a source,having the measured flux distribution with a different one of a set of sweep velocity modulation recipes; and (c) determining from the predicted film thickness profiles one of the sweep velocity modulation recipes which is adequate to achieve a desired thickness profile, having a predetermined characteristic, for film deposition on the substrate as said substrate is swept across the source in accordance with said one of the sweep velocity modulation recipes. 6. The method of claim 5, also including the step of: performing a vapor deposition operation in which the source deposits a film of the material on the substrate while said substrate is swept across the source in accordance with said one of the sweep velocity modulation recipes. 7. The method of claim 5, wherein the patterned wafer includes a layer of photoresist material with a pattern of features in the layer of photoresist material, and wherein step (a) includes the steps of: after the test film has been on deposited on the patterned wafer, performing a lift-off operation to remove from said patterned wafer the photoresist material together with the vapor deposited material on the photoresist, so that the vapor deposited material in the features remains as an array of elevated features on the wafer, each of the elevated features having a thickness, and measuring the thickness of each of the elevated features using a mechanical profilometer to generate flux distribution data indicative of feature thickness as a function of position on the wafer, such that said flux distribution data determines the flux distribution. 8. The method of claim 5, wherein step (c) includes the steps of: (d) determining from the predicted film thickness profiles a first one of the sweep velocity modulation recipes which is predicted to achieve a thickness profile at least approximately matching the desired thickness profile; (e) performing a vapor deposition operation in which the source deposits a film of the material on a test substrate while the test substrate is swept across the source in accordance with the first one of the sweep velocity modulation recipes; (f) generating measured thickness data by measuring thickness as a function of position on the test substrate of the film deposited in step (e); and (g) determining, from the predicted film thickness profiles and the measured thickness data, said one of the sweep velocity modulation recipes which is adequate to achieve the desired thickness profile. 9. The method of claim 5, wherein step (c) includes the steps of: (d) determining from the predicted film thickness profiles a first one of the sweep velocity modulation recipes which is predicted to achieve a thickness profile at least approximately matching the desired thickness profile; (e) performing a vapor deposition operation in which the source deposits a film of the material on a test substrate while the test substrate is swept across the so