초록 ▼

Microreaction molds and methods of molding very thin films onto substrate surfaces are provided. The molds and molding methods allow for consistency and uniformity in the thicknesses of the films that are applied to the substrate surfaces. The molds may be single composite, such as etched silica, or

Microreaction molds and methods of molding very thin films onto substrate surfaces are provided. The molds and molding methods allow for consistency and uniformity in the thicknesses of the films that are applied to the substrate surfaces. The molds may be single composite, such as etched silica, or multicomposite, such as quartz/metal. The molds may further comprise an adjustable molding cavity. The molds of this invention are particularly applicable to generating thin polymeric films onto microchip substrates.

대표청구항 ▼

Microreaction molds and methods of molding very thin films onto substrate surfaces are provided. The molds and molding methods allow for consistency and uniformity in the thicknesses of the films that are applied to the substrate surfaces. The molds may be single composite, such as etched silica, or

Microreaction molds and methods of molding very thin films onto substrate surfaces are provided. The molds and molding methods allow for consistency and uniformity in the thicknesses of the films that are applied to the substrate surfaces. The molds may be single composite, such as etched silica, or multicomposite, such as quartz/metal. The molds may further comprise an adjustable molding cavity. The molds of this invention are particularly applicable to generating thin polymeric films onto microchip substrates. et al., 428/395; US-4882202, 19891100, Holtzman et al., 427/098; US-4886707, 19891200, Marshall, 428/395; US-4894169, 19900100, Delitsky, 210/698; US-4904735, 19900200, Chapman, Jr. et al., 525/199; US-4906384, 19900300, Hamilton, 210/697; US-4937123, 19900600, Chang et al., 428/096; US-4940757, 19900700, Moss, III et al., 525/502; US-4963409, 19901000, Liss et al., 428/096; US-4965325, 19901000, Liss et al., 525/508; US-5015259, 19910500, Moss, III et al., 008/115.6; US-5061763, 19911000, Moss, III et al., 525/502; US-5069941, 19911200, Ohmori et al., 427/385.5; US-5073442, 19911200, Knowlton et al., 428/267; US-5124438, 19920600, Brueckmann et al., 530/354; US-5132368, 19920700, Chapman, Jr. et al., 525/165; US-5212272, 19930500, Sargent et al., 524/745; US-5215602, 19930600, Ali et al., 148/023; US-5223179, 19930600, Connor et al., 252/548; US-5223340, 19930600, Moss, III et al., 428/395; US-5234466, 19930800, Sargent et al., 008/585; US-5308401, 19940500, Geke et al., 134/002; US-5310828, 19940500, Williams, 525/502; US-5316850, 19940500, Sargent et al., 428/378; US-5380518, 19950100, Roozdar et al., 423/477; US-5427748, 19950600, Wiedrich et al., 422/264; US-5459188, 19951000, Sargent et al., 524/319; US-5464911, 19951100, Williams et al., 525/502; US-5520962, 19960500, Jones, Jr., 427/393.4; US-5629376, 19970500, Sargent et al., 524/745; US-5672279, 19970900, Sargent et al., 210/698; US-6225403, 20010500, Knowlton, 524/501