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Semiconductor device and method of fabricating the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/84
출원번호 US-0471359 (1999-12-23)
우선권정보 JP-0371203 (1998-12-25)
발명자 / 주소
  • Yamazaki, Shunpei
  • Koyama, Jun
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Costellia, Jeffrey L.Nixon Peabody LLP
인용정보 피인용 횟수 : 130  인용 특허 : 28

초록 ▼

Reliability of crystalline TFTs is improved in a large area integrated circuit typified by an active matrix type liquid crystal display device. In TFTs having an LDD structure, a region whose LDD region overlaps with a gate electrode and a region not overlapping with the gate electrode are fabricate

대표청구항 ▼

Reliability of crystalline TFTs is improved in a large area integrated circuit typified by an active matrix type liquid crystal display device. In TFTs having an LDD structure, a region whose LDD region overlaps with a gate electrode and a region not overlapping with the gate electrode are fabricate

이 특허에 인용된 특허 (28)

  1. Matsumoto Hiroshi (Hachioji JPX), Active matrix liquid crystal display having a peripheral driving circuit element.
    상세보기
  2. Shibuya Tsukasa,JPX ; Yoshinouchi Atsushi,JPX ; Zhang Hongyong,JPX ; Takenouchi Akira,JPX, Active matrix type display device and fabrication method of the same.
    상세보기
  3. Kobayashi Kazuhiro,JPX ; Masutani Yuichi,JPX ; Murai Hiroyuki,JPX, Active-matrix liquid crystal display and fabrication method thereof.
    상세보기
  4. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Electro-optical device having silicon nitride interlayer insulating film.
    상세보기
  5. Friend Richard H. (Cambridge NY GBX) Burroughes Jeremy H. (New York NY) Bradley Donal D. (Cambridge GBX), Electroluminescent devices.
    상세보기
  6. Adan Alberto Oscar,JPX ; Kaneko Seiji,JPX, Field effect transistor and CMOS element having dopant exponentially graded in channel.
    상세보기
  7. Takemura Yasuhiko (Kanagawa JPX), Gate insulated semiconductor device.
    상세보기
  8. Konuma Toshimitsu (Kanagawa JPX) Nishi Takeshi (Kanagawa JPX) Shimizu Michio (Chiba JPX) Mori Harumi (Kanagawa JPX) Moriya Kouji (Kanagwa JPX) Murakami Satoshi (Kanagawa JPX), Liquid-crystal electro-optical apparatus and method of manufacturing the same.
    상세보기
  9. Hwang Jeong-Mo (Plano TX), Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain.
    상세보기
  10. Koyama Jun,JPX ; Kawasaki Yuji,JPX, Method for driving active matrix display device.
    상세보기
  11. Huang Tiao-Yuan (Cupertino CA), Method for fabricating double implanted LDD transistor self-aligned with gate.
    상세보기
  12. Pollack Gordon P. (Richardson TX), Method for forming a mesa-isolated SOI transistor having a split-process polysilicon gate.
    상세보기
  13. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Method for manufacturing a semiconductor device.
    상세보기
  14. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX, Method for manufacturing a semiconductor device.
    상세보기
  15. Lee Joo-hyung (Seoul KRX), Method for manufacturing offset polysilicon thin-film transistor.
    상세보기
  16. Zhang Hongyong,JPX ; Takayama Toru,JPX, Method for producing a semiconductor device including doping with a catalyst that is a group IV element.
    상세보기
  17. Racanelli Marco (Phoenix AZ) Hwang Bor-Yuan C. (Tempe AZ) Foerstner Juergen (Mesa AZ) Huang Wen-Ling M. (Phoenix AZ), Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate.
    상세보기
  18. Mase Akira (Aichi JPX) Hiroki Masaaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX), Method of driving an LCD employing an active matrix with short pulses for gray scale.
    상세보기
  19. Shibuya Tsukasa,JPX ; Yoshinouchi Atsushi,JPX ; Zhang Hongyong,JPX ; Takenouchi Akira,JPX, Method of making an active matrix type display.
    상세보기
  20. Friend Richard H. (Cambridge NY GBX) Burroughes Jeremy H. (New York NY) Bradley Donal D. (Cambridge GBX), Method of manufacturing of electrolumineschent devices.
    상세보기
  21. Park Chan Kwang,KRX, Semiconductor device and method for fabricating the same.
    상세보기
  22. Zhang Hongyong (Kanagawa JPX) Koyama Jun (Kanagawa JPX) Teramoto Satoshi (Kanagawa JPX), Semiconductor device and process for fabricating the same.
    상세보기
  23. Takemura Yasuhiko (Kanagawa JPX), Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either v.
    상세보기
  24. Pfiester James R. (Austin TX), Semiconductor device having an MOS transistor with overlapped and elevated source and drain.
    상세보기
  25. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Itoh Masataka,JPX, Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith.
    상세보기
  26. Inoue Shunsuke (Yokohama JPX) Koizumi Toru (Yokohama JPX) Miyawaki Mamoru (Tokyo JPX) Sugawa Shigetoshi (Atsugi JPX), Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness.
    상세보기
  27. Jung Byung-Hoo,KRX ; Jin Yong-Suk,KRX ; Lee Joo-Hyung,KRX ; Hwang Chang-Won,KRX, Thin film transistor-liquid crystal display and a manufacturing method thereof.
    상세보기
  28. Kawasaki Ritsuko,JPX ; Kitakado Hidehito,JPX ; Kasahara Kenji,JPX ; Yamazaki Shunpei,JPX, Thin film transistors having ldd regions.
    상세보기

이 특허를 인용한 특허 (130)

  1. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration.
    상세보기
  2. Boday, Dylan J.; Kuczynski, Joseph; Wertz, Jason T.; Zhang, Jing, Anti-corrosion conformal coating comprising modified porous silica fillers for metal conductors electrically connecting an electronic component.
    상세보기
  3. Koyama, Jun; Kimura, Hajime, Display device.
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  4. Koyama, Jun; Kimura, Hajime, Display device.
    상세보기
  5. Koyama, Jun; Kimura, Hajime, Display device.
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  6. Koyama, Jun; Kimura, Hajime, Display device.
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  7. Koyama, Jun; Kimura, Hajime, Display device.
    상세보기
  8. Kurokawa, Yoshiyuki; Ikeda, Takayuki; Tamura, Hikaru; Yamazaki, Shunpei, Display device.
    상세보기
  9. Tanada, Yoshifumi, Display device.
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  10. Tanada, Yoshifumi, Display device.
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  11. Tanada, Yoshifumi, Display device.
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  12. Tanada, Yoshifumi, Display device.
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  13. Tanada, Yoshifumi, Display device.
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  14. Tanaka, Yukio, Display device.
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  15. Tanaka,Yukio, Display device.
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  16. Yoshida, Yasunori; Kimura, Hajime; Maekawa, Shinji; Nakamura, Osamu; Yamazaki, Shunpei, Display device.
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  17. Yoshida, Yasunori; Kimura, Hajime; Maekawa, Shinji; Nakamura, Osamu; Yamazaki, Shunpei, Display device.
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  18. Yoshida, Yasunori; Kimura, Hajime; Maekawa, Shinji; Nakamura, Osamu; Yamazaki, Shunpei, Display device.
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  19. Yoshida, Yasunori; Kimura, Hajime; Maekawa, Shinji; Nakamura, Osamu; Yamazaki, Shunpei, Display device.
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  20. Yoshida, Yasunori; Kimura, Hajime; Maekawa, Shinji; Nakamura, Osamu; Yamazaki, Shunpei, Display device.
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  21. Fujikawa, Saishi; Hosoya, Kunio, Display device and manufacturing method of the same.
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  22. Fujikawa, Saishi; Hosoya, Kunio, Display device and manufacturing method of the same.
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  23. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Display including casing and display unit.
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  24. Chaji, Gholamreza, Dynamic adjustment of touch resolutions on an AMOLED display.
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  25. Chaji, Gholamreza, Electrode contacts.
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  27. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Electroluminescence display device.
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  29. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Electroluminescence display device.
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  30. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Electroluminescence display device.
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  31. Yamazaki, Shunpei; Koyama, Jun; Inukai, Kazutaka, Electronic device.
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  32. Chaji, Gholamreza, High density pixel pattern.
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  33. Chaji, Gholamreza, High pixel density array architecture.
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  34. Chaji, Gholamreza, High pixel density array architecture.
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  35. Chaji, Gholamreza; Azizi, Yaser, Integrated gate driver.
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  36. Koyama,Jun; Kimura,Hajime, Light emitting device.
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  37. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and manufacturing method thereof.
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  38. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and manufacturing method thereof.
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  39. Nathan, Arokia; Chaji, Gholamreza; Servati, Peyman, Method and system for programming and driving active matrix light emitting device pixel having a controllable supply voltage.
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  40. Yamazaki, Shunpei; Koyama, Jun, Method for manufacturing an electrooptical device.
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  41. Sakama, Mitsunori; Ishimaru, Noriko; Asami, Taketomi; Yamazaki, Shunpei, Method of fabricating a semiconductor device.
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  43. Ohtani, Hisashi, Method of manufacturing thin film transistor.
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  47. Chaji, Gholamreza; Tian, Baolin, Multi-functional active matrix organic light-emitting diode display.
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  50. Chaji, Gholamreza; Moradi, Maryam, Organic light emitting diode and method of manufacturing.
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  55. Nathan, Arokia; Sakariya, Kapil V.; Servati, Peyman; Jafarabadiashtiani, Shahin, Pixel driver circuit with load-balance in current mirror circuit.
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  57. Striakhilev, Denis; Nathan, Arokia; Vygranenko, Yuri; Tao, Sheng, Pixel having an organic light emitting diode and method of fabricating the pixel.
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