IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0316493
(1999-05-21)
|
발명자
/ 주소 |
- Henley, Francois J.
- Cheung, Nathan
|
출원인 / 주소 |
- Silicon Genesis, Corporation
|
대리인 / 주소 |
Townsend and Townsend and Crew LLP
|
인용정보 |
피인용 횟수 :
159 인용 특허 :
166 |
초록
▼
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high c
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
대표청구항
▼
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high c
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. , 274/009; US-4179546, 19791200, Garner et al., 521/056; US-4192859, 19800300, Mackaness et al., 424/005; US-4224179, 19800900, Schneider, 252/316; US-4229360, 19801000, Schneider et al., 270/403; US-4265251, 19810500, Tickner, 128/660; US-4276885, 19810700, Tickner et al., 128/660; US-4310505, 19820100, Baldeschwieler et al., 424/001; US-4310506, 19820100, Baldeschwieler et al., 424/001; US-4315514, 19820200, Drewes et al., 128/653; US-4331654, 19820500, Morris, 424/038; US-4334929, 19820800, Bonsen et al., 424/015; US-4342826, 19820800, Cole, 435/007; US-4420442, 19831200, Sands, 264/013; US-4421562, 19831200, Sands et al., 106/075; US-4426330, 19840100, Sears, 270/403; US-4427649, 19840100, Dingle et al., 424/038; US-4428924, 19840100, Millington, 424/004; US-4442843, 19840400, Rasor et al., 128/660; US-4466442, 19840800, Hilmann et al., 128/653; US-4485193, 19841100, Rubens et al., 521/058; US-4530360, 19850700, Duarte, 128/419.F; US-4534899, 19850800, Sears, 270/403; US-4540629, 19850900, Sands et al., 428/402; US-4544545, 19851000, Ryan et al., 424/001.1; US-4549892, 19851000, Baker et al., 065/021.4; US-4569836, 19860200, Gordon, 424/001.1; US-4572203, 19860200, Feinstein, 128/653; US-4586512, 19860500, Do-huu et al., 128/660; US-4603044, 19860700, Geho et al., 424/009; US-4615879, 19861000, Runge et al., 424/009; US-4620546, 19861100, Aida et al., 128/660; US-4621023, 19861100, Redziniak et al., 428/402.2; US-4646756, 19870300, Watmough et al., 128/804; US-4657756, 19870400, Rasor et al., 424/009; US-4658828, 19870400, Dory, 128/660; US-4663161, 19870500, Mannino et al., 424/089; US-4675310, 19870600, Chapman et al., 514/006; US-4681119, 19870700, Rasor et al., 128/660; US-4684479, 19870800, D'Arrigo, 252/307; US-4689986, 19870900, Carson et al., 073/019; US-4693999, 19870900, Axelsson et al., 514/174; US-4718433, 19880100, Feinstein et al., 128/660; US-4728575, 19880300, Gamble al., 428/402.2; US-4728578, 19880300, Higgins et al., 428/462; US-4731239, 19880300, Gordon, 424/009; US-4737323, 19880400, Martin et al., 274/004.3; US-4767610, 19880800, Long, 424/005; US-4774958, 19881000, Feinstein, 128/660.01; US-4775522, 19881000, Clark, Jr., 424/009; US-4776991, 19881000, Farmer et al., 274/004.3; US-4781871, 19881100, West III et al., 274/004.3; US-4789501, 19881200, Day et al., 252/645; US-4790891, 19881200, Halliday et al., 149/002; US-4822534, 19890400, Lencki et al., 264/004.3; US-4830828, 19890500, Payne et al., 424/450; US-4834964, 19890500, Rosen, 424/009; US-4844882, 19890700, Widder et al., 424/009; US-4863717, 19890900, Keana, 424/009; US-4865836, 19890900, Long, Jr., 424/005; US-7866096, 19890900, Schweighardt, 514/756; US-4877561, 19891000, Iga et al., 274/004.3; US-4893624, 19900100, Lele, 128/399; US-4895719, 19900100, Radhakrishnan, 424/045; US-4895876, 19900100, Schweighardt, et al., 514/747; US-4898734, 19900200, Mathiowitz et al., 424/426; US-4900540, 19900200, Ryan et al., 424/009; US-4918065, 19900400, Stindl et al., 514/179; US-4919895, 19900400, Heldebrant et al., 422/129; US-4921706, 19900500, Roberts et al., 424/450; US-4927623, 19900500, Long, Jr., 424/005; US-4933121, 19900600, Law et al., 264/004.3; US-4938947, 19900700, Nicolau et al., 424/001.1; US-4957656, 19900900, Cerny et al., 252/311; US-4972002, 19901100, Volkert, 521/120; US-4981692, 19910100, Popescu et al., 424/422; US-4984573, 19910100, Leunbach, 128/653; US-4985550, 19910100, Charpiot et al., 536/018.4; US-4987754, 19910100, Long, Jr., 514/772; US-4993415, 19910200, Long, 128/653.A; US-4996041, 19910200, Arai et al., 424/009; US-5000960, 19910300, Wallach, 424/450; US-5004611, 19910400, Leigh, 424/450; US-5008050, 19910400, Cullis et al., 274/004.3; US-5008109, 19910400, Tin, 424/422; US-5013556, 19910500, Woodle et al., 424/450; US-5019370, 19910500, Jay et al., 424/004; US-5045304, 19910900, Schneider et al., 424/009; US-5049388, 19910900, Knight et al., 424/450; US-4229360, 19911100, Schneider et al., 270/403; US-5077036, 19911
※ AI-Helper는 부적절한 답변을 할 수 있습니다.