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An apparatus and method for opening a vial lid with respect to its respective container includes the lid having a tamper evident tape applied over a top surface of the lid with the ends of the tape being adhered against the outer side walls of the vial container below a juncture of the lid and the c

An apparatus and method for opening a vial lid with respect to its respective container includes the lid having a tamper evident tape applied over a top surface of the lid with the ends of the tape being adhered against the outer side walls of the vial container below a juncture of the lid and the container outer wall. The tape has a score on each side in the area adjacent to the juncture. The apparatus includes a device for opening the lid by lifting the lid with respect to the container by a sufficient elevation to ensure that the tape score is substantially completely separated. A second device places a downwardly depending flange of the lid in an overlapped position with respect to an upper end wall of the container after the lid has been opened.

대표청구항 ▼

An apparatus and method for opening a vial lid with respect to its respective container includes the lid having a tamper evident tape applied over a top surface of the lid with the ends of the tape being adhered against the outer side walls of the vial container below a juncture of the lid and the c

An apparatus and method for opening a vial lid with respect to its respective container includes the lid having a tamper evident tape applied over a top surface of the lid with the ends of the tape being adhered against the outer side walls of the vial container below a juncture of the lid and the container outer wall. The tape has a score on each side in the area adjacent to the juncture. The apparatus includes a device for opening the lid by lifting the lid with respect to the container by a sufficient elevation to ensure that the tape score is substantially completely separated. A second device places a downwardly depending flange of the lid in an overlapped position with respect to an upper end wall of the container after the lid has been opened. the polymerization process includes the step of exposing substrates to an ion energy of 1 to 50 eV. 15. The method according to claim 14, wherein the ion energy is 5 to 30 eV. 16. The method according to claim 14, wherein the ion energy is 15 eV. 17. A method of anisotropic etching of silicon with structures by using a plasma, comprising the steps of: a) applying a polymer, using a polymerization process and an oxygen-free passivation gas, to a lateral border of the structures; b) simultaneously: partially removing the applied polymer using an etching process, the etching process being performed with an etching gas containing sulfur, fluorine, and 3to 40 vol % oxygen, the oxygen being used only at a beginning of the etching process and redepositing the polymer in deeper portions of a side wall newly formed by the etching process, wherein: a performance of the polymerization process is alternated with a performance of the etching process; and c) oxidizing sulfur atoms in an area of a vacuum pump and in an exhaust gas line, wherein the oxidation of the sulfur atoms prevents an interfering deposition of sulfur in the pump and in the exhaust gas line. 18. A method of anisotropic etching of silicon with structures by using a plasma, comprising the steps of: a) applying a polymer, using a polymerization process and an oxygen-free passivation gas, to a lateral border of the structures; b) simultaneously: partially removing the applied polymer using an etching process, the etching process being performed with an etching gas containing sulfur, fluorine, and 3 to 40 vol % oxygen, the oxygen being used only at an end of the etching process, and redepositing the polymer in deeper portions of a side wall newly formed by the etching process, wherein: a performance of the polymerization process is alternated with a performance of the etching process; and c) oxidizing sulfur atoms in an area of a vacuum pump and in an exhaust gas line, wherein the oxidation of the sulfur atoms prevents an interfering deposition of sulfur in the pump and in the exhaust gas line.