IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0636611
(2000-08-11)
|
발명자
/ 주소 |
- Ryan, Jr., William R.
- Ryan, Mildred J.
|
인용정보 |
피인용 횟수 :
16 인용 특허 :
8 |
초록
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A battery adapter device for providing flexibility in the choice of batteries for powering electrical and electronic devices. The battery adapter device includes a container member having a size which is adapted to be generally equivalent to a larger conventional cell battery and being adapted to re
A battery adapter device for providing flexibility in the choice of batteries for powering electrical and electronic devices. The battery adapter device includes a container member having a size which is adapted to be generally equivalent to a larger conventional cell battery and being adapted to replace the larger cell battery in devices energized with larger cell batteries; and also includes a support assembly for supporting a conventional AA battery in the container member.
대표청구항
▼
A battery adapter device for providing flexibility in the choice of batteries for powering electrical and electronic devices. The battery adapter device includes a container member having a size which is adapted to be generally equivalent to a larger conventional cell battery and being adapted to re
A battery adapter device for providing flexibility in the choice of batteries for powering electrical and electronic devices. The battery adapter device includes a container member having a size which is adapted to be generally equivalent to a larger conventional cell battery and being adapted to replace the larger cell battery in devices energized with larger cell batteries; and also includes a support assembly for supporting a conventional AA battery in the container member. r-deposited epitaxial bismuth-layered perovskite thin films," Applied Physics, Applied Physics A (Materials Science & Processing) (Germany), p. 283-291, (Feb. 23, 2000). Moon et al., "Controlled growth of a-1b- and c-axis oriented epitaxial SrBi2Ta2O9 ferroelectric thin films," Applied Physics Letters, American Institute of Physics (Korea), vol. 75 (No. 18), p. 2827-2829, (Nov. 1, 1999). Ishikawa et al., "Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition," Applied Physics Letters, American Institute of Physics (Japan), vol. 75 (No. 13), p. 1970-1972, (Sep. 27, 1999). Alexe et al., "Patterning and switching of nanosize ferroelectric memory cells," Applied Physics Letters, American Institute of Physics (Germany), vol. 75 (No. 12), p. 1793-1795, (Sep. 20, 1999). Alexei Gruverman, "Scaling effect on statistical behavior of switching parameters of ferroelectric capacitors," Applied Physics Letters, American Institute of Physics (Japan), vol. 75 (No. 10), p. 1452-1454, (Sep. 6, 1999). Nagahama et al., "Epitaxy of (106)-oriented SrBi2Ta2O9 and SrBi2Nb2O9 thin films," Thin Solid Films, p. 52-55, (Jun. 2, 1999). Shimakawa et al., "Crystal structures and ferroelectric properties of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9," Applied Physics Letters, American Institute of Physics (Japan), vol. 74 (No. 13), p. 1904-1906, Feb. 1, 1999. Lettieri et al., "Epitaxial growth of (001)-oriented and (110)-oriented SrBi2Ta2O9 thin films," Applied Physics Letters, American Institute of Physics (USA), vol. 73 (No. 20), p. 2923-2925, (Nov. 16, 1998). Sanchez et al., "Epitaxial growth of SrTiO3 (00h), (0hh), and (hhh) thin films on buffered Si(001)," J. Mater. Res., Material Research Society (Spain), vol. 13, (No. 6), p. 1422-1425, (Jun. 1998). Pignolet et al., "Epitaxial and Large Area PLD Ferroelectric Thin Film Heterostructures on Silicon Substrates," Integrated Ferroelectrics, Overseas Publishers Association (OPA), p. 485-498, (Jun. 4, 1998). Eom et al., "Single Crystal Thin Films of Conductive Oxides SrRuO3 and Ferroelectric Heterostructures," Integrated Ferroelectrics, Overseas Publishers Association (OPA), p. 251-261, (Apr. 3, 1998). Chen et al., "Epitaxial SrRuO3 thin films on (001) SrTiO3," Applied Physics Letters, American Institute of Physics (USA), vol. 71 (No. 8), p. 1047-1049, (Aug. 25, 1997). Jia et al., "Deposition of epitaxial yttria-stabilized zirconia on single-crystal Si and subsequent growth of an amorphous SiO2 interlayer," Philosophical Magazine Letters, Center of Materials Science (USA), vol. 72 (No. 6), p. 385-391, (Jul. 12, 1995). Eom et al., "Single-Crystal Epitaxial Thin Films of the Isotropic Metallic Oxides Sr1-xCaxRuO3 (0
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