초록 ▼

The present invention relates to a controlled delivery system that can be incorporated in liquid, as well as, dry granular, or powder, fabric care products, such as fabric softeners, laundry detergents, rinse added products, and other fabric care products, to enhance fragrance performance. The contr

The present invention relates to a controlled delivery system that can be incorporated in liquid, as well as, dry granular, or powder, fabric care products, such as fabric softeners, laundry detergents, rinse added products, and other fabric care products, to enhance fragrance performance. The controlled delivery system of the present invention is a solid, substantially spherical particle comprising hydrophobic cationic charge enhancing agents in conjunction with cationic fabric softening agents that assist in adhering the particles onto fabric. The particles can also include a fragrance. The particle can have an average particle diameter of from about 1 micron to about 500 microns. The controlled delivery system of the present invention can be utilized to deliver a broad range of fragrance ingredients onto fabric and prolong fragrance release from the dry laundered fabric over an extended period of time, or yield a high impact fragrance "burst" upon ironing the fabric. The invention also pertains to fabric care products comprising the controlled release system of the present invention.

대표청구항 ▼

The present invention relates to a controlled delivery system that can be incorporated in liquid, as well as, dry granular, or powder, fabric care products, such as fabric softeners, laundry detergents, rinse added products, and other fabric care products, to enhance fragrance performance. The contr

The present invention relates to a controlled delivery system that can be incorporated in liquid, as well as, dry granular, or powder, fabric care products, such as fabric softeners, laundry detergents, rinse added products, and other fabric care products, to enhance fragrance performance. The controlled delivery system of the present invention is a solid, substantially spherical particle comprising hydrophobic cationic charge enhancing agents in conjunction with cationic fabric softening agents that assist in adhering the particles onto fabric. The particles can also include a fragrance. The particle can have an average particle diameter of from about 1 micron to about 500 microns. The controlled delivery system of the present invention can be utilized to deliver a broad range of fragrance ingredients onto fabric and prolong fragrance release from the dry laundered fabric over an extended period of time, or yield a high impact fragrance "burst" upon ironing the fabric. The invention also pertains to fabric care products comprising the controlled release system of the present invention. emiconductor structure, comprising the following steps: a) a main etch step wherein said dielectric ARC layer and said titanium nitride layer are sequentially exposed to a plasma generated from a source gas comprising chlorine and a fluorocarbon, wherein an atomic ratio of chlorine:fluorine in said main etch source gas ranges from about 1:10 to about 10:1, and wherein said main etch step etches through less than about 98% of said layer of titanium nitride; and b) an overetch step following said main etch step, wherein a portion of said layer of titanium nitride which was not etched during said main etch step is exposed to a plasma generated from a source gas comprising chlorine and a bromine-containing compound. 10. The method of claim 9, wherein said etch in step a) is through less than about 80% of said layer of titanium nitride. 11. The method of claim 10, wherein said overetch source gas comprises Cl2and HBr. 12. The method of claim 9, wherein said overetch source gas comprises Cl2and HBr. 13. The method of claim 11 or claim 12, wherein an atomic ratio of chlorine:bromine in said second source gas ranges from about 1:4 to about 4:1. 14. The method of claim 13, wherein said chlorine:bromine ratio and a bias power applied to said semiconductor structure during said overetch step are adjusted to provide selectivity relative to an underlying oxide or nitride layer and to achieve a desired titanium nitride etch profile. 15. The method of claim 9 or claim 10, wherein said pattern includes a gate structure. 16. A method of pattern etching a dielectric ARC layer and an underlying titanium nitride layer within a semiconductor structure, comprising the following steps: a) a main etch step whereinsaid dielectric ARC layer and said titanium nitride layer are sequentially exposed to a plasma generated from a source gas comprising chlorine and a fluorocarbon, wherein an atomic ratio of chlorine:fluorine in said main etch source gas ranges from about 1:10 to about 10:1, and wherein said main etch step etches through about 98% or more of the thickness of said layer of titanium nitride; and b) an overetch step following said main etch step, wherein a remaining portion of the thickness of said layer of titanium nitride which was not etched during said main etch step is exposed to a plasma generated from a source gas comprising chlorine and a bromine-containing compound. 17. The method of claim 16, wherein said overetch source gas comprises Cl2and HBr. 18. The method of claim 16 or claim 17, wherein an atomic ratio of chlorine:bromine in said second source gas ranges from about 1:4 to about 4:1. 19. The method of claim 18, wherein a combination of said atomic ratio of chlorine:bromine and a bias power applied to said semiconductor structure are adjusted during said overetch step to provide selectivity relative to an underlying oxide or nitride layer and to achieve a desired titanium nitride etch profile. -line capacitance using low dielectric constant (K) materials is provided. Embodiments in accordance with the present invention form structures for semiconductor devices having a single level of interconnection as well as semiconductor devices having multiple levels of interconnection. In embodiments of the present invention, an initial dielectric structure is formed having a first low-K material overlaid with a standard-K material. In subsequent processing, conductive interconnects are formed and the standard-K material replaced with a second low-K material. In some embodiments of the present invention, the first and-second low-K materials are the same material, in some embodiments the first and second low-K materials are different materials. Embodiments of the present invention having multiple levels of conductive interconnects are formed by employing methods and materials analogous to those used to form the first level of conductive interconnect and dielectric material disposed there between. Embodiments of the present invention employ low-K materials formed by spin-on processes as well as low-K materials formed by CVD processes. sawa et al., "Organic Low-k Film Etching Using N-H Plasma", Proceedings of Symposium on Dry Process, IV-2, pp. 221-226, Nov. 1999. W. Chen et al., "SiO2etching in magnetic neutral loop discharge plasma", J. Vac. Sci. Technol. A, vol. 16, No. 3, May/Jun. 1998. G. Rajagopalan et al., "Development of Damascene Etch Process for Organic Dielectric Materials", Abstract of the 1999 Joint International Meeting of ECS, vol. 99-2, No. 702, Oct. 1999. Partial English Translation of Laid Open Unexamined Japanese Patent Application Publication No. 64-25419.