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A submersible generating plant for producing electricity from ocean currents. The apparatus consists of two counter-rotating, rear-facing turbines with a plurality of rotor blades extending radially outward from two separate horizontal axis that convey the kinetic energy from the two side-by-side tu

A submersible generating plant for producing electricity from ocean currents. The apparatus consists of two counter-rotating, rear-facing turbines with a plurality of rotor blades extending radially outward from two separate horizontal axis that convey the kinetic energy from the two side-by-side turbine rotors through separate gearboxes to separate generators that are housed in two watertight nacelles that are located sufficiently far apart to provide clearance for the turbine rotors. The two generators and their gearboxes serve as ballast and are located below a streamlined buoyancy tank that extends fore and aft above and between them. A leverage system having no moving parts adjusts lifting forces to balance changing downward vector forces that result from changes in drag acting on the downward angled anchor line.

대표청구항 ▼

A submersible generating plant for producing electricity from ocean currents. The apparatus consists of two counter-rotating, rear-facing turbines with a plurality of rotor blades extending radially outward from two separate horizontal axis that convey the kinetic energy from the two side-by-side tu

A submersible generating plant for producing electricity from ocean currents. The apparatus consists of two counter-rotating, rear-facing turbines with a plurality of rotor blades extending radially outward from two separate horizontal axis that convey the kinetic energy from the two side-by-side turbine rotors through separate gearboxes to separate generators that are housed in two watertight nacelles that are located sufficiently far apart to provide clearance for the turbine rotors. The two generators and their gearboxes serve as ballast and are located below a streamlined buoyancy tank that extends fore and aft above and between them. A leverage system having no moving parts adjusts lifting forces to balance changing downward vector forces that result from changes in drag acting on the downward angled anchor line. nterconnects and top interconnects including a first top interconnect having a maximum thickness and a second top interconnect having a thickness thinner than that of the first top interconnect. Thereby, optimization of the parasitic capacitance and the parasitic resistance depending on the demand on the circuit operation and the interconnect length can be attained. and having an intermediate portion passing transversely across the first surface of one of the spacer strips; a means for enclosing the first semiconductor die, the first pair of spacer strips, the electrically conductive paths, and at least a portion of the first surface of the substrate within said semiconductor package; a second semiconductor die having opposite first and second surfaces; and, a second pair of spacer strips, each comprising a flat, elongated member of an insulative material having a first surface and an opposite second surface mounted on the second surface of the second die, the second die being mounted on the first die such that corresponding pairs of respective ones of the first surfaces of respective ones of the spacer strips in respective ones of the first and second pairs of the spacer strips are in opposed alignment with each other, and such that the intermediate portions of the conductive paths pass between a corresponding one of the pairs of opposing first surfaces of the spacer strips. 7. The semiconductor package of claim 6, the metal wires are bonded to the terminal pads on the die with ball bonds, and wherein the sum of the thicknesses of the respective spacer strips is equal to or greater than a height of the wires above the die. 8. The semiconductor package of claim 6, wherein the second semiconductor die includes a first surface with an outer edge, and terminal pad at the first surface; and further comprising: a second insulative spacer and a second electrically conductive path covered by the means, wherein the second insulative spacer includes a first surface, and an opposite second surface coupled to the first surface of the second semiconductor die between the terminal pad and the outer edge, and the second electrically conductive path passes across the first surface of the second insulative spacer and electrically couples the terminal pad of the second semi-conductor die to the substrate. 9. The semiconductor package of claim 6, wherein the electrically conductive path comprises a metal wire bonded to the terminal pad on the semiconductor die with a ball bond, and, a thickness of the spacer is equal to or greater than a height of the wire above the die. 10. A semiconductor package comprising: a substrate; a semiconductor die coupled to the substrate, said semiconductor die including a first surface with an outer edge, and terminal pad at the first surface; an insulative spacer having a first surface, and an opposite second surface coupled to the first surface of the semiconductor die between the terminal pad and the outer edge; an electrically conductive path passing across the first surface of the spacer and electrically coupling the terminal pad to the substrate; and a means coupled to the substrate for protectively covering the semiconductor die, the spacer, the electrically conductive path, and at least a portion of the substrate, wherein the spacer includes a groove in the first surface that extends parallel to a direction of the electrically conductive path, and said electrically conductive path passes through said groove. 11. The semiconductor package of claim 10, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad to the substrate. 12. The semiconductor package of claim 10, wherein the electrically conductive path comprises a metal wire bonded to the terminal pad on the semiconductor die with a ball bond, and a thickness of the spacer is equal to or greater than a height of the wire above the die. 13. The semiconductor package of claim 10, further comprising a second semiconductor die within said package over the first semiconductor die, wherein the second semiconductor is coupled to the first surface of the insulative spacer through an insulative layer, and is electrically coupled to the substrate. 14. The semiconductor package of claim 13, wherein the electrically conductive path is a single electrical c onductor extending from the terminal pad to the substrate. 15. A semiconductor package comprising: a substrate; a semiconductor die coupled to the substrate, said semiconductor die including a first surface with an outer edge, and terminal pad at the first surface; an insulative spacer having a first surface, and an opposite second surface coupled to the first surface of the semiconductor die between the terminal pad and the outer edge; an electrically conductive path passing across the first surface of the spacer and electrically coupling the terminal pad to the substrate; and a means coupled to the substrate for protectively covering the semiconductor die, the spacer, the electrically conductive path, and at least a portion of the substrate, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad to the substrate. 16. A semiconductor package comprising: a substrate; a semiconductor die coupled to the substrate, said semiconductor die including a first surface with an outer edge, and terminal pad at the first surface; an insulative spacer having a first surface, an electrically conductive region confined to the first surface of the spacer, and an opposite second surface coupled to the first surface of the semiconductor die between the terminal pad and the outer edge; and an electrically conductive path passing across the first surface of the spacer and electrically coupling the terminal pad to the substrate, wherein the electrically conductive path includes at least one electrical conductor bonded to the electrically conductive region. 17. The semiconductor package of claim 16, wherein the electrically conductive path includes a first electrical conductor having a first end coupled to the terminal pad and a second end coupled to the electrically conductive region, and second electrical conductor having a first end coupled to the electrically conductive region and a second end coupled to the substrate. 18. The semiconductor package of claim 16, further comprising a second semiconductor die over the first semiconductor die. 19. The semiconductor package of claim 18, further comprising an insulative layer, wherein the second semiconductor die is coupled to the first surface of the insulative spacer over the electrically conductive path through the insulative layer. 20. The semiconductor package of claim 18, wherein the second semiconductor die includes a first surface with an outer edge, and terminal pad at the first surface; and further comprising: a second insulative spacer and a second electrically conductive path, wherein the second insulative spacer includes a first surface, and an opposite second surface coupled to the first surface of the second semiconductor die between the terminal pad and the outer edge, and the second electrically conductive path passes across the first surface of the second insulative spacer and electrically couples the terminal pad of the second semiconductor die to the substrate. 21. The semiconductor package of claim 16, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad to the substrate. 22. The semiconductor package of claim 16, further comprising an enclosure coupled to the substrate and covering the semiconductor die, the spacer, the electrically conductive path, and at least a portion of the substrate. 23. The semiconductor package of claim 16, wherein the electrically conductive path comprises a metal wire bonded to the terminal pad on the semiconductor die with a ball bond, and a thickness of the spacer is equal to or greater than a height of the wire above the die. 24. The semiconductor package of claim 16, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad to the substrate. 25. A semiconductor package comprising: a substrate; a semiconductor die coupled to the substrate, said semiconductor die including a first surface with a perimeter, and terminal pad at the first surface; an insulative spacer having a first surface, an electrically conductive region confined to the first surface, and a second surface opposite the first surface and coupled to the first surface of the semiconductor die between the terminal pad and the perimeter; a first electrical conductor coupled between the terminal pad and the electrically conductive region, and a second electrical conductor coupled between the electrically conductive region and the substrate; and a means coupled to the substrate for protectively covering the semiconductor die, the spacer, the first and second electrical conductors, and at least a portion of the substrate. 26. The semiconductor package of claim 25, further comprising a second semiconductor die over the first semiconductor die and covered by said means. 27. The semiconductor package of claim 26, wherein the second semiconductor is coupled to the first surface of the insulative spacer through an insulative layer. 28. The semiconductor package of claim 26, wherein the second semiconductor die includes a first surface with a perimeter, and terminal pad at the first surface; and further comprising a second insulative spacer coupled to the first surface of the second semiconductor die between the terminal pad and the perimeter; and an electrically conductive path passing over the second spacer and electrically coupling the terminal pad of the second semiconductor die and the substrate. 29. A semiconductor package comprising: a substrate; a semiconductor die coupled to the substrate, said semiconductor die including a first surface with an outer edge, and terminal pad at the first surface; an electrically conductive path coupling the terminal pad to the substrate; and an insulative spacer having a first surface and an opposite second surface, wherein the first surface includes a groove extending parallel to a direction of the electrically conductive path, a portion of the electrically conductive path is within said groove, and the second surface of the insulative spacer is coupled to the first surface of the semiconductor die between the terminal pad and the outer edge. 30. The semiconductor package of claim 29, further comprising a means coupled to the substrate and for protectively covering the semiconductor die, the spacer, the first and second electrical conductors, and at least a portion of the substrate. 31. The semiconductor package of claim 29, further comprising an enclosure coupled to the substrate and covering the semiconductor die, the spacer, the electrically conductive path, and at least a portion of the substrate. 32. The semiconductor package of claim 29, further comprising a second semiconductor die within said package over the first semiconductor die, wherein the second semiconductor is coupled to the first surface of the insulative spacer through an insulative layer, and is electrically coupled to the substrate. 33. The semiconductor package of claim 32, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad of the first semiconductor die to the substrate. 34. The semiconductor package of claim 32, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad to the substrate. 35. The semiconductor package of claim 29, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad to the substrate. 36. A semiconductor package comprising: a substrate; a first semiconductor die coupled to the substrate, said first semiconductor die including a first surface with an outer edge, and terminal pad at the first surface; an insulative spacer having a first surface, and an opposite second surface coupled to the first surface of the first semiconductor die between the terminal pad and the outer edge; an electrically conductive path passing across the first sur face of the spacer and electrically coupling the terminal pad to the substrate; and a second semiconductor die over the first die and coupled to the first surface of the insulative spacer over the electrically conductive semiconductor path, wherein the second semiconductor die is electrically coupled to the substrate, wherein the electrically conductive path is a single electrical conductor extending from the terminal pad of the first semiconductor die to the substrate. 37. 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