Low-noise active-pixel sensor for imaging arrays with high speed row reset
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H04N-005/217
H04N-003/14
H04N-005/335
H01L-027/00
출원번호
US-0149937
(1998-09-09)
발명자
/ 주소
Kozlowski, Lester J.
Standley, David L.
출원인 / 주소
Pictos Technologies, Inc.
대리인 / 주소
Rourk, Christopher J.Akin, Gump, Strauss, Hauer & Feld, LLP
인용정보
피인용 횟수 :
44인용 특허 :
29
초록▼
An imager pixel including a photodetector, a first MOS transistor functioning as the driver of a source follower amplifier during signal readout, a second MOS transistor serving as a pixel readout transistor, a third MOS transistor serving as a photodetector reset transistor, and a reset noise cance
An imager pixel including a photodetector, a first MOS transistor functioning as the driver of a source follower amplifier during signal readout, a second MOS transistor serving as a pixel readout transistor, a third MOS transistor serving as a photodetector reset transistor, and a reset noise cancellation circuit including a fourth MOS transistor, first and second capacitances, and an amplifier having a gain which is the inverse of the ratio of the first to the second capacitance.
대표청구항▼
An imager pixel including a photodetector, a first MOS transistor functioning as the driver of a source follower amplifier during signal readout, a second MOS transistor serving as a pixel readout transistor, a third MOS transistor serving as a photodetector reset transistor, and a reset noise cance
An imager pixel including a photodetector, a first MOS transistor functioning as the driver of a source follower amplifier during signal readout, a second MOS transistor serving as a pixel readout transistor, a third MOS transistor serving as a photodetector reset transistor, and a reset noise cancellation circuit including a fourth MOS transistor, first and second capacitances, and an amplifier having a gain which is the inverse of the ratio of the first to the second capacitance. efore developing of said electrostatic latent image. 7. An image forming apparatus as claimed in claim 5, being characterized by further comprising a charge control device for making said latent image carrier into a uniformly charged state, wherein residual developing powder left on said latent image carrier after transfer is adapted to be charged to have the same polarity as the original polarity of said developing powder consisting of a single component at the same time when said charge control device makes said latent image carrier into the uniformly charged state. 8. An image forming apparatus as claimed in claim 5, being characterized in that said developing is reverse developing. 9. An image forming apparatus as claimed in claim 6, being characterized by further comprising a charge control device for making said latent image carrier into a uniformly charged state, wherein residual developing powder left on said latent image carrier after transfer is adapted to be charged to have the same polarity as the original polarity of said developing powder consisting of a single component at the same time when said charge control device makes said latent image carrier into the uniformly charged state. 10. An image forming apparatus as claimed in claim 6, being characterized in that said developing is reverse developing. 11. An image forming apparatus as claimed in claim 7, being characterized in that said developing is reverse developing. 12. An image forming apparatus as claimed in claim 9, being characterized in that said developing is reverse developing. 13. An image forming apparatus as claimed in claim 2, being characterized in that said developing device is a developing device for developing said electrostatic latent image with developing powder consisting of a single component; by further comprising a transferring device for transferring a developing powder image on said latent image carrier, developed by said developing device, to a receiving medium; and in that residual developing powder left on said latent image carrier after transfer is adapted to be charged to have the same polarity as the original polarity of said developing powder consisting of a single component. 14. An image forming apparatus as claimed in claim 13, being characterized in that a large number of microscopic particles are interposed at least between said writing electrodes and said latent image carrier to allow free rolling of said microscopic particles, wherein said microscopic particles are adapted to be charged at least to have the same polarity as the original polarity of said developing powder before developing of said electrostatic latent image. 15. An image forming apparatus as claimed in claim 13, being characterized by further comprising a charge control device for making said latent image carrier into a uniformly charged state, wherein residual developing powder left on said latent image carrier after transfer is adapted to be charged to have the same polarity as the original polarity of said developing powder consisting of a single component at the same time when said charge control device makes said latent image carrier into the uniformly charged state. 16. An image forming apparatus as claimed in claim 13, being characterized in that said developing is reverse developing. 17. An image forming apparatus as claimed in claim 14, being characterized by further comprising a charge control device for making said latent image carrier into a uniformly charged state, wherein residual developing powder left on said latent image carrier after transfer is adapted to be charged to have the same polarity as the original polarity of said developing powder consisting of a single component at the same time when said charge control device makes said latent image carrier into the uniformly charged state. 18. An image forming apparatus as claimed in claim 14, being characterized in that said developing is reverse developing. 19. An image forming appara
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이 특허에 인용된 특허 (29)
Wyles Richard H. (Cardiff CA) Madajian David (Carlsbad CA), 3-transistor source follower-per-detector unit cell for 2-dimensional focal plane arrays.
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Ackland Bryan D. (Old Bridge NJ) Dickinson Alexander G. (Neptune NJ) Eid El-Sayed I. (Freehold NJ) Inglis David A. (Long Branch NJ), Imaging active pixel device having a non-destructive read-out gate.
Chi Min-Hwa (Palo Alto CA) Bergemont Albert (Palo Alto CA) Haggag Hosam (Mountain View CA), Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range.
Chi Min-Hwa (Palo Alto CA) Bergemont Albert (Palo Alto CA), Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range.
Ackland Bryan D. (Old Bridge NJ) Dickinson Alexander G. (Neptune NJ) Eid El-Sayed I. (Freehold NJ) Inglis David A. (Long Branch NJ), Single-polysilicon CMOS active pixel.
Pain, Bedabrata; Cunningham, Thomas J.; Hancock, Bruce; Seshadri, Suresh; Ortiz, Monico; Yang, Guang, Photodiode CMOS imager with column-feedback soft-reset for imaging under ultra-low illumination and with high dynamic range.
Lee,Hae Seung; Fife,Keith Glen; Brooks,Lane G., Precise CMOS imager transfer function control for expanded dynamic range imaging using variable-height multiple reset pulses.
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