IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
|
출원번호 |
US-0573689
(2000-05-19)
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발명자
/ 주소 |
- McCrossin, Thomas K.
- Hipp, Carl D.
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
5 인용 특허 :
29 |
초록
▼
A beverage cart is described that includes a bottom portion with a substantially rectangular shape, having front, rear, right, and left sides. Upstanding wall portions extend upwardly from the bottom portion at each of the front, rear, right, and left sides, mate with the bottom portion, and rigidly
A beverage cart is described that includes a bottom portion with a substantially rectangular shape, having front, rear, right, and left sides. Upstanding wall portions extend upwardly from the bottom portion at each of the front, rear, right, and left sides, mate with the bottom portion, and rigidly interlock with one another through tongue and groove fasteners provided thereon. A top portion rigidly interlocks with the right and left upstanding wall portions through tongue and groove fasteners provided thereon. At least one intermediate upstanding wall portion is disposed between the right and left upstanding wall portions and rigidly interconnects with the front and rear upstanding wall portions through tongue and groove fasteners provided thereon. At least one horizontal shelf portion is disposed between any two of the upstanding wall portions and rigidly interlocks with the two upstanding wall portions through tongue and groove fasteners provided thereon. At least the rear upstanding wall portion has a central region cut out to permit access to the interior of the beverage cart. The beverage cart's respective components are easily assembled and disassembled and are made of a plastic material such as polypropylene.
대표청구항
▼
A beverage cart is described that includes a bottom portion with a substantially rectangular shape, having front, rear, right, and left sides. Upstanding wall portions extend upwardly from the bottom portion at each of the front, rear, right, and left sides, mate with the bottom portion, and rigidly
A beverage cart is described that includes a bottom portion with a substantially rectangular shape, having front, rear, right, and left sides. Upstanding wall portions extend upwardly from the bottom portion at each of the front, rear, right, and left sides, mate with the bottom portion, and rigidly interlock with one another through tongue and groove fasteners provided thereon. A top portion rigidly interlocks with the right and left upstanding wall portions through tongue and groove fasteners provided thereon. At least one intermediate upstanding wall portion is disposed between the right and left upstanding wall portions and rigidly interconnects with the front and rear upstanding wall portions through tongue and groove fasteners provided thereon. At least one horizontal shelf portion is disposed between any two of the upstanding wall portions and rigidly interlocks with the two upstanding wall portions through tongue and groove fasteners provided thereon. At least the rear upstanding wall portion has a central region cut out to permit access to the interior of the beverage cart. The beverage cart's respective components are easily assembled and disassembled and are made of a plastic material such as polypropylene. ntly processed wafer. 7. The method of claim 1, wherein said photoresist features comprising said grating structure are comprised of lines or trenches. 8. The method of claim 1, wherein measuring light reflected off of said at least one grating structure to generate an optical characteristic trace for said grating structure is performed after said layer of photoresist has been subjected to a post-exposure bake process and prior to said layer of photoresist being subjected to a development process. 9. The method of claim 1, wherein measuring light reflected off of said at least one grating structure to generate an optical characteristic trace for said grating structure is performed after said layer of photoresist is subjected to a development process. 10. The method of claim 1, wherein forming at least one grating structure in a layer of photoresist, said formed grating structure being comprised of a plurality of photoresist features having an unknown thickness comprises forming at least one grating structure in a layer of photoresist in each of a plurality of exposure fields of a stepper exposure process, said formed grating structure being comprised of a plurality of photoresist features having an unknown thickness. 11. The method of claim 1, wherein forming at least one grating structure in a layer of photoresist, said formed grating structure being comprised of a plurality of photoresist features having an unknown thickness comprises forming at least one grating structure in a layer of photoresist in each of at least five exposure fields of a stepper exposure process, said formed grating structure being comprised of a plurality of photoresist features having an unknown thickness. 12. The method of claim 10, wherein forming at least one grating structure comprises forming at least three grating structures. 13. The method of claim 10, wherein forming at least one grating structure comprises forming at least five grating structures. 14. The method of claim 11, wherein forming at least one grating structure comprises forming at least three grating structures. 15. The method of claim 11, wherein forming at least one grating structure comprises forming at least five grating structures. 16. A method, comprising: providing a library of optical characteristic traces, each of which corresponds to a grating structure comprised of a plurality of photoresist features having a known thickness; forming at least one grating structure in a layer of photoresist in each of a plurality of exposure fields of a stepper exposure process, said formed grating structure being comprised of a plurality of photoresist features having an unknown thickness; illuminating said formed grating structure; measuring light reflected off of said formed grating structure to generate an optical characteristic trace for said formed grating structure; determining said unknown thickness of said photoresist features by comparing said generated optical characteristic trace to at least one optical characteristic trace from said library; and modifying at least one parameter of a process used to form a layer of photoresist on at least one subsequently processed wafer based upon said comparison of said generated optical characteristic trace and said at least one optical characteristic trace from said library. 17. The method of claim 16, wherein forming at least one grating structure in a layer of photoresist comprises forming at least three grating structures in a layer of photoresist. 18. The method of claim 16, wherein forming at least one grating structure in a layer of photoresist comprises forming at least five grating structures in a layer of photoresist. 19. The method of claim 16, wherein modifying at least one parameter of a process used to form a layer of photoresist on at least one subsequently processed wafer comprises modifying at least one of a rotational speed of a wafer during a spin coating process, a duration of a spin coating process, a quantit y of a photoresist material initially deposited on a wafer prior to performing a spin coating process, a temperature of a cooling process performed on a wafer prior to application of a photoresist material to the wafer, a temperature of a pre-exposure bake process, and a duration of a pre-exposure bake process of a wafer for at least one subsequently processed wafer. 20. The method of claim 16, wherein said photoresist features comprising said grating structure are comprised of lines or trenches. 21. The method of claim 16, wherein forming at least one grating structure in a layer of photoresist comprises forming at least one grating structure in a layer of photoresist, one of which is formed in an approximate middle of said exposure field. 22. The method of claim 16, wherein each of said plurality of exposure fields is defined by a top edge, a bottom edge, a plurality of side edges and four corners. 23. The method of claim 16, wherein forming at least one grating structure in a layer of photoresist comprises forming at least five grating structures in a layer of photoresist, one of said grating structures being positioned at approximately a middle of said exposure field, and each of four of said grating structures being positioned proximate a corner of said exposure field. 24. The method of claim 16, wherein measuring light reflected off of said at least one grating structure to generate an optical characteristic trace for said grating structure is performed after said layer of photoresist has been subjected to a post-exposure bake process and prior to said layer of photoresist being subjected to a development process. 25. The method of claim 16, wherein measuring light reflected off of said at least one grating structure to generate an optical characteristic trace for said grating structure is performed after said layer of photoresist is subjected to a development process. 26. The method of claim 16, wherein forming at least one grating structure in a layer of photoresist in each of a plurality of exposure fields of a stepper exposure process, said formed grating structure being comprised of a plurality of photoresist features having an unknown thickness comprises forming at least one grating structure in a layer of photoresist in each of at least five exposure fields of a stepper exposure process, said formed grating structure being comprised of a plurality of photoresist features having an unknown thickness. 27. The method of claim 26, wherein forming at least one grating structure comprises forming at least three grating structures. 28. A method, comprising: providing a library of optical characteristic traces, each of which corresponds to a grating structure comprised of a plurality of photoresist features having a known thickness; forming at least one grating structures in a layer of photoresist in each of at least five exposure fields of a stepper exposure process, each of said formed grating structures being comprised of a plurality of photoresist features having an unknown thickness; illuminating said formed grating structures; measuring light reflected off of each of said plurality of formed grating structures to generate an optical characteristic trace for each of said plurality of formed grating structures; determining said unknown thickness of said photoresist features by comparing each of said generated optical characteristic traces to at least one optical characteristic trace from said library; and modifying at least one parameter of a process used to form a layer of photoresist on at least one subsequently processed wafer based upon said comparison of said generated optical characteristic traces and said at least one optical characteristic trace from said library. 29. The method of claim 28, wherein forming at least one grating structure in a layer of photoresist comprises forming at least three grating structures in a layer of photoresist. 30. The method of claim 28, wherein forming at least one gra
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