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Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-005/12
  • B05D-003/00
  • C25D-005/02
  • C25D-005/18
  • C25D-003/38
출원번호 US-0740701 (2000-12-18)
발명자 / 주소
  • Basol, Bulent
출원인 / 주소
  • Nutool, Inc.
대리인 / 주소
    Pillsbury Winthrop LLP
인용정보 피인용 횟수 : 66  인용 특허 : 6

초록

The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby

대표청구항

The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby

이 특허에 인용된 특허 (6)

  1. Taylor E. Jennings ; Sun Jenny J. ; Zhou Chengdong, Electrodeposition of metals in small recesses using modulated electric fields.
  2. Reid Jonathan David, Electroplating system including additive for filling sub-micron features.
  3. Tsai Ming-Hsing,TWX ; Tsai Wen-Jye,TWX ; Shue Shau-Lin,TWX ; Yu Chen-Hua,TWX, Method for improvement of gap filling capability of electrochemical deposition of copper.
  4. Ueno Kazuyoshi,JPX, Method of electroplating copper interconnects.
  5. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.
  6. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.

이 특허를 인용한 특허 (66)

  1. Talieh,Homayoun, Apparatus for electroprocessing a workpiece surface.
  2. Cohen, Uri, Apparatus for enhanced electrochemical deposition.
  3. Ashjaee,Jalal; Nagorski,Boguslaw; Basol,Bulent M.; Talieh,Homayoun; Uzoh,Cyprian, Apparatus for processing surface of workpiece with small electrodes and surface contacts.
  4. Kovarsky,Nicolay; Yang,Michael; Lubomirsky,Dmitry, Contact plating apparatus.
  5. Herchen,Harald, Contact ring with embedded flexible contacts.
  6. Talieh,Homayoun; Uzoh,Cyprian; Basol,Bulent M., Device providing electrical contact to the surface of a semiconductor workpiece during processing.
  7. Talieh,Homayoun; Uzoh,Cyprian; Basol,Bulent M., Device providing electrical contact to the surface of a semiconductor workpiece during processing.
  8. Talieh,Homayoun; Uzoh,Cyprian; Basol,Bulent M., Device providing electrical contact to the surface of a semiconductor workpiece during processing.
  9. Herchen,Harald; Lubomirsky,Dmitry; Zheng,Bo; Pang,Lily L., Electric field reducing thrust plate.
  10. Basol, Bulent M.; Bogart, Jeffrey, Electrode and pad assembly for processing conductive layers.
  11. Cohen, Uri, Electroplated metallic conductors.
  12. Cohen, Uri, Enhanced electrochemical deposition (ECD) filling of high aspect ratio openings.
  13. Cohen, Uri, Enhanced electrochemical deposition filling.
  14. Basol,Bulent M., Filling deep features with conductors in semiconductor manufacturing.
  15. Emesh, Ismail; Arena, Chantal J.; Basol, Bulent M., Filling deep features with conductors in semiconductor manufacturing.
  16. Cohen,Uri, Filling high aspect ratio openings by enhanced electrochemical deposition (ECD).
  17. Cohen, Uri, High speed electroplating metallic conductors.
  18. Sprey, Hessel; Nakano, Akinori, Liner materials and related processes for 3-D integration.
  19. Burkhart,Vincent E.; Herchen,Harald; Yahalom,Joseph, Liquid isolation of contact rings.
  20. Basol, Bulent M., Method and apparatus for filling low aspect ratio cavities with conductive material at high rate.
  21. Talieh,Homayoun; Basol,Bulent, Method and apparatus for forming an electrical contact with a semiconductor substrate.
  22. Basol,Bulent M., Method and apparatus for localized material removal by electrochemical polishing.
  23. Mayer, Steven T.; Drewery, John S., Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation.
  24. Vasilev, Vladislav, Method and apparatus for workpiece surface modification for selective material deposition.
  25. Vasilev, Vladislav, Method and apparatus for workpiece surface modification for selective material deposition.
  26. Uzoh,Cyprian E.; Talieh,Homayoun; Basol,Bulent M.; Yakupoglu,Halit N., Method and system for optically enhanced metal planarization.
  27. Basol, Bulent M., Method for controlling conductor deposition on predetermined portions of a wafer.
  28. Andricacos, Panayotis; Deligianni, Hariklia; Horkans, Wilma Jean; Kwietniak, Keith T.; Lane, Michael; Malhotra, Sandra G.; McFeely, Fenton Read; Murray, Conal; Rodbell, Kenneth P.; Vereecken, Philipp, Method for electroplating on resistive substrates.
  29. Mayer,Steven T.; Reid,Jonathan D.; Rea,Mark L.; Emesh,Ismail T.; Meinhold,Henner W.; Drewery,John S., Method for planar electroplating.
  30. Schuster,Israel, Method for the implementation of electronic components in via-holes of a multi-layer multi-chip module.
  31. Talieh,Homayoun; Uzoh,Cyprian; Basol,Bulent M., Method of making rolling electrical contact to wafer front surface.
  32. Nakamura, Kenji; Nakazawa, Masao, Method of plating for filling via holes.
  33. Tsao,Jung Chih; Li,Chi Wen; Chen,Kei Wei; Hsu,Jye Wei; Fong,Hsien Pin; Lin,Steven; Chuang,Ray, Method to reduce Rs pattern dependence effect.
  34. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  35. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  36. Cohen, Uri, Methods for activating openings for jets electroplating.
  37. Mayer, Steven T.; Porter, David W., Modulated metal removal using localized wet etching.
  38. Teerlinck, Ivo; Mertens, Paul, Multi-step method for metal deposition.
  39. Uzoh,Cyprian; Basol,Bulent; Talieh,Homayoun, Pad designs and structures for a versatile materials processing apparatus.
  40. Mayer, Steven T.; Svirchevski, Julia; Drewery, John Stephen, Pad-assisted electropolishing.
  41. Mayer, Steven T.; Drewery, John Stephen; Webb, Eric G., Photoresist-free metal deposition.
  42. Nakai, Toru; Kawai, Satoru, Plating apparatus and method of plating.
  43. Tachi, Yasuaki; Sawa, Shigeki; Kasuga, Toshiyuki, Plating apparatus and plating method.
  44. Tachi, Yasuaki; Sawa, Shigeki; Kasuga, Toshiyuki, Plating apparatus and plating method.
  45. Kurashina,Keiichi; Nagai,Mizuki; Yamamoto,Satoru; Kanda,Hiroyuki; Mishima,Koji; Baker,Brett; Deligianni,Hariklia; Vereecken,Phillipe, Plating apparatus for substrate.
  46. Nakai, Toru; Kawai, Satoru; Niwa, Hiroshi; Iwata, Yoshiyuki, Plating apparatus, plating method and multilayer printed circuit board.
  47. Nakai, Toru; Kawai, Satoru; Niwa, Hiroshi; Iwata, Yoshiyuki, Plating apparatus, plating method and multilayer printed circuit board.
  48. Nakai, Toru; Kawai, Satoru; Niwa, Hiroshi; Iwata, Yoshiyuki, Plating apparatus, plating method and multilayer printed circuit board.
  49. Nakai,Toru; Kawai,Satoru; Niwa,Hiroshi; Iwata,Yoshiyuki, Plating apparatus, plating method and multilayer printed circuit board.
  50. Basol,Bulent, Plating by creating a differential between additives disposed on a surface portion and a cavity portion of a workpiece.
  51. Basol, Bulent M., Plating method and apparatus for controlling deposition on predetermined portions of a workpiece.
  52. Basol, Bulent M., Plating method and apparatus for controlling deposition on predetermined portions of a workpiece.
  53. Basol, Bulent M., Plating method and apparatus for controlling deposition on predetermined portions of a workpiece.
  54. Basol, Bulent M., Plating methods for low aspect ratio cavities.
  55. Talieh,Homayoun; Uzoh,Cyprian; Basol,Bulent M., Providing electrical contact to the surface of a semiconductor workpiece during processing.
  56. Mayer, Steven T.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  57. Mayer, Steven T.; Drewery, John; Hill, Richard S.; Archer, Timothy; Kepten, Avishai, Selective electrochemical accelerator removal.
  58. Mayer, Steven T.; Stowell, Marshall R.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  59. Drewery,John Stephen; Mayer,Steven T., Selectively accelerated plating of metal features.
  60. Mayer, Steven T.; Drewery, John Stephen, Selectively accelerated plating of metal features.
  61. Mayer,Steven T.; Drewery,John Stephen, Selectively accelerated plating of metal features.
  62. Josell,Daniel; Moffat,Thomas P.; Wheeler,Daniel, Superconformal metal deposition using derivatized substrates.
  63. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  64. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  65. Uzoh, Cyprian E.; Basol, Bulent M., Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same.
  66. Uzoh,Cyprian E.; Basol,Bulent M., Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same.
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