초록 ▼

Diffusion barriers are used in integrated circuits. The present method of depositing diffusion barriers eliminates the formation of high resistivity phases, providing high electrical conductivity and diffusion suppression between the interconnect conductors, for example copper, and the semiconductor

Diffusion barriers are used in integrated circuits. The present method of depositing diffusion barriers eliminates the formation of high resistivity phases, providing high electrical conductivity and diffusion suppression between the interconnect conductors, for example copper, and the semiconductor device. In a preferred embodiment, the diffusion barrier is formed by depositing a film of binary transition metal nitride then treating the film in a gas containing silicon in order to form a layer of silicon rich material on the surface of the binary transition metal nitride film.

대표청구항 ▼

Diffusion barriers are used in integrated circuits. The present method of depositing diffusion barriers eliminates the formation of high resistivity phases, providing high electrical conductivity and diffusion suppression between the interconnect conductors, for example copper, and the semiconductor

Diffusion barriers are used in integrated circuits. The present method of depositing diffusion barriers eliminates the formation of high resistivity phases, providing high electrical conductivity and diffusion suppression between the interconnect conductors, for example copper, and the semiconductor device. In a preferred embodiment, the diffusion barrier is formed by depositing a film of binary transition metal nitride then treating the film in a gas containing silicon in order to form a layer of silicon rich material on the surface of the binary transition metal nitride film. t al., 257/040; US-5281489, 19940100, Mori et al., 428/690; US-5300575, 19940400, Jonas et al., 525/186; US-5317169, 19940500, Nakano et al., 257/040; US-5328809, 19940700, Holmes et al., 430/321; US-5399502, 19950300, Friend et al., 437/001; US-5401827, 19950300, Holmes et al., 528/374; US-5408109, 19950400, Heeger et al., 528/040; US-5425125, 19950600, Holmes et al., 385/143; US-5466392, 19951100, Hironaka et al., 252/301.16; US-5484922, 19960100, Moore et al., 046/007; US-5487953, 19960100, Shirota et al., 428/690; US-5512654, 19960400, Homes et al., 528/373; US-5672678, 19970900, Holmes et al., 528/373; US-5726457, 19980300, Nakano et al., 257/040; US-5766515, 19980600, Jonas et al., 525/500; US-5869350, 19990200, Heeger et al., 438/029; US-6083635, 20000700, Jonas et al., 428/690; US-6169163, 20010100, Woo et al., 528/397