초록 ▼

The invention pertains to a process for preparing a catalyst composition comprising bulk catalyst particles comprising at least one Group VIII non-noble metal and at least two Group VIB metals. The process comprises combining and reacting at least one Group VIII non-noble metal component with at lea

The invention pertains to a process for preparing a catalyst composition comprising bulk catalyst particles comprising at least one Group VIII non-noble metal and at least two Group VIB metals. The process comprises combining and reacting at least one Group VIII non-noble metal component with at least two Group VIB metal components in the presence of a protic liquid, with at least one of the metal components remaining at least partly in the solid state during the entire process. The Group VIII and Group VIB metals comprise from about 50 wt. % to about 100 wt. %, calculated as oxides, of the total weight of said bulk catalyst particles, with the solubility of those of the metal components which are at least partly in the solid state during the reaction being less than 0.05 mol/100 ml water at 18° C. The invention also covers a catalyst composition made by that process and a process for the hydroprocessing of a hydrocarbon feedstock by contacting the feedstock with that catalyst at hydroprocessing conditions.

대표청구항 ▼

The invention pertains to a process for preparing a catalyst composition comprising bulk catalyst particles comprising at least one Group VIII non-noble metal and at least two Group VIB metals. The process comprises combining and reacting at least one Group VIII non-noble metal component with at lea

The invention pertains to a process for preparing a catalyst composition comprising bulk catalyst particles comprising at least one Group VIII non-noble metal and at least two Group VIB metals. The process comprises combining and reacting at least one Group VIII non-noble metal component with at least two Group VIB metal components in the presence of a protic liquid, with at least one of the metal components remaining at least partly in the solid state during the entire process. The Group VIII and Group VIB metals comprise from about 50 wt. % to about 100 wt. %, calculated as oxides, of the total weight of said bulk catalyst particles, with the solubility of those of the metal components which are at least partly in the solid state during the reaction being less than 0.05 mol/100 ml water at 18° C. The invention also covers a catalyst composition made by that process and a process for the hydroprocessing of a hydrocarbon feedstock by contacting the feedstock with that catalyst at hydroprocessing conditions. 15. A method of preventing resist erosion and pattern collapse during a trim etch process in the manufacture of a gate structure, the method comprising: depositing an inorganic hard mask material layer over a polysilicon layer; providing a silicon-containing imaging layer over the inorganic hard mask material layer; patterning the silicon-containing imaging layer according to a pattern of gate structures; removing portions of the inorganic hard mask material layer uncovered by the patterned imaging layer, the inorganic hard mask material layer having a pattern with widths less than witdths of the pattern of the imaging layer; and removing portions of the polysilicon layer uncovered by the unremoved portions of the inorganic hard mask material layer to form gate structures. 16. The method of claim 15, wherein the step of providing a silicon-containing imaging layer over the inorganic hard mask material layer comprises spin applying the silicon-containing imaging layer. 17. The method of claim 15, further comprising removing the silicon-containing imaging layer with a hydrofluoric (HF) dip. 18. The method of claim 15, wherein the patterned silicon-containing imaging layer includes apertures having a width of 30-100 nm. 19. The method of claim 15, further comprising doping a substrate below the polysilicon layer to form active regions. 20. The method of claim 19, further comprising forming spacers proximate lateral sides of the gate structures.