Insulating construction form and manner of employment for same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
E04G-017/06
E04B-002/86
출원번호
US-0323013
(1999-06-01)
발명자
/ 주소
Amend, Victor A.
대리인 / 주소
Orange, John R. S.Orange & Chari
인용정보
피인용 횟수 :
39인용 특허 :
23
초록▼
An insulating construction form consisting of a pair of spaced apart panels and a plurality of ties is applied to the building of structural walls. The tie members include pairs of resilient retainer arms, which define a series of adjacent receptacles. A reinforcing bar is typically inserted into th
An insulating construction form consisting of a pair of spaced apart panels and a plurality of ties is applied to the building of structural walls. The tie members include pairs of resilient retainer arms, which define a series of adjacent receptacles. A reinforcing bar is typically inserted into the receptacles and its displacement therefrom is inhibited by abutment surfaces. Markings are positioned on each panel to guide the attachment of a cladding. In one aspect, the construction form serves for the formation of a corner, wherein a vertical rod is positioned for the attachment of the cladding. In another aspect, the panels includ a plurality of openings made at the time of manufacture.
대표청구항▼
An insulating construction form consisting of a pair of spaced apart panels and a plurality of ties is applied to the building of structural walls. The tie members include pairs of resilient retainer arms, which define a series of adjacent receptacles. A reinforcing bar is typically inserted into th
An insulating construction form consisting of a pair of spaced apart panels and a plurality of ties is applied to the building of structural walls. The tie members include pairs of resilient retainer arms, which define a series of adjacent receptacles. A reinforcing bar is typically inserted into the receptacles and its displacement therefrom is inhibited by abutment surfaces. Markings are positioned on each panel to guide the attachment of a cladding. In one aspect, the construction form serves for the formation of a corner, wherein a vertical rod is positioned for the attachment of the cladding. In another aspect, the panels includ a plurality of openings made at the time of manufacture. n on the first panel member. One of the first and second latch portions is trippingly deflectable to disengage the first latch portion from the second latch portion through application of pressure to a trip area, the trip area being hidden from view. magnetic layer being directly in contact with the metal reflective layer. 10. A magnetoresistive device according to claim 1, wherein the magnetic layer directly in contact with the metal reflective layer includes at least two interface magnetic layers which sandwich a soft magnetic layer therebetween and are mainly composed of Co or a Co-rich Co--Fe alloy. 11. A magnetoresistive device According to claim 1, wherein at least one of the at least two magnetic layers has a different coercivity from a coercivity of the other magnetic layer(s). 12. A magnetoresistive device according to claim 1, further comprising: an antiferromagnetic layer formed in contact with one of the first magnetic surface and the second magnetic surface, wherein the antiferromagnetic layer and the metal reflective layer are formed on opposite sides of the structure. 13. A magnetoresistive device according to claim 12, further comprising a further non-magnetic layer between the metal reflective layer and the magnetic surface. 14. A magnetoresistive device according to claim 12, wherein the antiferromagnetic layer is an oxide. 15. A magnetoresistive device according to claim 12, wherein the antiferromagnetic layer is made of Ni--O. 16. A magnetoresistive device according to claim 12, wherein the antiferromagnetic layer is made of α-Fe2O3. 17. A magnetoresistive device according to claim 12, wherein the second magnetic layer includes two or more magnetic layers which are each stacked via a further non-magnetic layer. 18. A magnetoresistive device according to claim 12, wherein the antiferromagnetic layer is epitaxially grown over a substrate. 19. A magnetoresistive device according to claim 1, comprising a structure in which a first magnetic layer, the non-magnetic layer, a second magnetic layer, an antiferromagnetic layer and the metal reflective layer are stacked in this order. 20. A magnetoresistive device according to claim 19, further comprising a non-magnetic layer between the antiferromagnetic layer and the metal reflective layer. 21. A magnetoresistive device according to claim 20, wherein the antiferromagnetic layer is made of an Ir--Mn alloy. 22. A magnetoresistive device according to claim 19, wherein the antiferromagnetic layer is made of an Ir--Mn alloy. 23. A magnetoresistive device according to claim 1, comprising a structure in which a first antiferromagnetic layer, a magnetic layer, a non-magnetic layer, a soft magnetic layer, a non-magnetic layer, a magnetic layer, a second antiferromagnetic layer and a metal reflective layer are stacked in this order directly on a substrate or over the substrate via an underlying layer. 24. A magnetoresistive device according to claim 23, further comprising a non-magnetic layer between the second antiferromagnetic layer and the metal reflective layer. 25. A magnetoresistive device according to claim 24, wherein the second antiferromagnetic layer is made of an Ir--Mn alloy. 26. A magnetoresistive device according to claim 23, wherein the first antiferromagnetic layer is an oxide. 27. A magnetoresistive device according to claim 23, wherein the soft magnetic layer includes two or more magnetic layers which are stacked via a non-magnetic layer. 28. A magnetoresistive device according to claim 23, wherein the first antiferromagnetic layer is made of Ni--O. 29. A magnetoresistive device according to claim 28, wherein at least one of the first and the second antiferromagnetic layers is made of an Ir--Mn alloy. 30. A magnetoresistive device according to claim 23, wherein the first antiferromagnetic layer is made of α-Fe2O3. 31. A magnetoresistive device according to claim 30, wherein the first antiferromagnetic layer is epitaxially grown over the substrate. 32. A magnetoresistive device according to claim 23, wherein the second antiferromagnetic layers are made of an Ir--Mn alloy. 33. A magnetoresistive device according to claim 1, comprising a structure in which
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