초록 ▼

The present invention relates to novel bisbenzophenones and the use thereof as an ultraviolet light absorber. The presently claimed compounds are particularly useful, either alone or in combination with other additives, including other ultraviolet light absorbers, antioxidants and stabilizers, in st

The present invention relates to novel bisbenzophenones and the use thereof as an ultraviolet light absorber. The presently claimed compounds are particularly useful, either alone or in combination with other additives, including other ultraviolet light absorbers, antioxidants and stabilizers, in stabilizing polymers and other materials from degradation by environmental forces such as actinic radiation (ultraviolet light), oxidation, moisture, atmospheric pollutants and combinations thereof.

대표청구항 ▼

The present invention relates to novel bisbenzophenones and the use thereof as an ultraviolet light absorber. The presently claimed compounds are particularly useful, either alone or in combination with other additives, including other ultraviolet light absorbers, antioxidants and stabilizers, in st

The present invention relates to novel bisbenzophenones and the use thereof as an ultraviolet light absorber. The presently claimed compounds are particularly useful, either alone or in combination with other additives, including other ultraviolet light absorbers, antioxidants and stabilizers, in stabilizing polymers and other materials from degradation by environmental forces such as actinic radiation (ultraviolet light), oxidation, moisture, atmospheric pollutants and combinations thereof. -100:98-0 and at a temperature of from 80 to 450° C. 17. A process for producing the electro-conductive oxide particle according to claim 2, which comprises calcining a mixture of an In compound, and an Sb compound in the air at a temperature of from 500 to 900° C. 18. The process according to claim 17, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 19. A process for producing the electro-conductive oxide particle according to claim 2, which comprises contacting a mixture of an In compound and an Sb compound with an alkali compound in an aqueous medium to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 20. The process according to claim 19, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 21. A process for producing the electro-conductive oxide particle according to claim 3, which comprises calcining a mixture of an In compound, an Sb compound, and a Zn compound in the air at a temperature of from 500 to 900° C. 22. The process according to claim 21, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 23. A process for producing the electro-conductive oxide particle according to claim 3, which comprises contacting a mixture of an In compound, an Sb compound, and a Zn compound with an alkali compound in an aqueous medium to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 24. The process according to claim 23, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 25. A process for producing the electro-conductive oxide particle according to claim 4, which comprises calcining a mixture of an In compound and a Nb compound in the air at a temperature of from 500 to 900° C. 26. The process according to claim 25, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 27. A process for producing the electro-conductive oxide particle according to claim 4, which comprises contacting a mixture of an In compound and a Nb compound with an alkali compound in an aqueous medium to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 28. The process according to claim 27, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 29. A process for producing the electro-conductive oxide particle according to claim 5, which comprises calcining a mixture of an In compound and a Nb compound in the air at a temperature of from 500 to 900° C. 30. The process according to claim 29, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 31. A process for producing the electro-conductive oxide particle according to claim 5, which comprises contacting a mixture of an In compound and a Nb compound with an alkali com pound in an aqueous medium to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 32. The process according to claim 31, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 33. A process for producing the electro-conductive oxide particle according to claim 6, which comprises calcining a mixture of an In compound, a Nb compound and an Sb compound in the air at a temperature of from 500 to 900° C. 34. The process according to claim 33, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 35. A process for producing the electro-conductive oxide particle according to claim 6, which comprises contacting a mixture of an In compound, a Nb compound and an Sb compound with an alkali compound in an aqueous medium to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 36. The process according to claim 35, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 37. A process for producing the electro-conductive oxide particle according to claim 7, which comprises contacting a mixture of an In compound and an Sb compound with an alkalai compound in an aqueous medium at a temperature of from 0 to 10° C. to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500° C. to 900° C. 38. The process according to claim 35, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 39. A process for producing the electro-conductive oxide particle according to claim 7, which comprises contacting an aqueous medium containing a mixture of an In compound and an Sb compound with a heat resistant strongly basic ion exchange resin, followed by heating at a temperature of from 40 to 100° C. to form a slurry of indium hydroxide doped with at least one metal element, drying the slurry and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 40. The process according to claim 33, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 41. A process for producing the electro-conductive oxide particle according to claim 8, which comprises contacting a mixture of an In compound and an Sb compound with an alkalai compound in an aqueous medium at a temperature of from 0 to 10° C. to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500° C. to 900° C. 42. The process according to claim 41, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 43. A process for producing the electro-conductive oxide particle according to claim 8, which comprises contacting an aqueous medium containing a mixture of an In compound and an Sb compound with a heat resistant strongly basic ion exchange resin, followed by heating at a temperature of from 40 to 100° C. to form a slurry of indium hydroxide doped with at least one metal element, drying the slurry and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 44. The process according to claim 43, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 45. A process for producing the electro-conductive oxide particle according to claim 9, which comprises contacting a mixture of an In compound, an Sb compound, and a Zn compound with an alkalai compound in an aqueous medium at a temperature of from 0 to 10° C. to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500° C. to 900° C. 46. The process according to claim 45, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 47. A process for producing the electro-conductive oxide particle according to claim 9 which comprises contacting an aqueous medium containing a mixture of an In compound, an Sb compound, and a Zn compound with a heat resistant strongly basic ion exchange resin, followed by heating at a temperature of from 40 to 100° C. to form a slurry of indium hydroxide doped with at least one metal element, drying the slurry and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 48. The process according to claim 47 wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 49. A process for producing the electro-conductive oxide particle according to claim 10 which comprises contacting a mixture of an In compound and a Nb compound with an alkalai compound in an aqueous medium at a temperature of from 0 to 10° C. to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500° C. to 900° C. 50. The process according to claim 49 wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 51. A process for producing the electro-conductive oxide particle according to claim 10 which comprises contacting an aqueous medium containing a mixture of an In compound and a Nb compound with a heat resistant strongly basic ion exchange resin, followed by heating at a temperature of from 40 to 100° C. to form a slurry of indium hydroxide doped with at least one metal element, drying the slurry and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 52. The process according to claim 51, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 53. A process for producing the electro-conductive oxide particle according to claim 11, which comprises contacting a mixture of an In compound and a Nb compound with an alkalai compound in an aqueous medium at a temperature of from 0 to 10° C. to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500° C. to 900° C. 54. The process according to claim 53, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 55. A process for producing the electro-conductive oxide particle a ccording to claim 11, which comprises contacting an aqueous medium containing a mixture of an In compound and a Nb compound with a heat resistant strongly basic ion exchange resin, followed by heating at a temperature of from 40 to 100° C. to form a slurry of indium hydroxide doped with at least one metal element, drying the slurry and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 56. The process according to claim 55, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 57. A process for producing the electro-conductive oxide particle according to claim 12, which comprises contacting a mixture of an In compound, a Nb compound and an Sb compound with an alkalai compound in an aqueous medium at a temperature of from 0 to 10° C. to form a slurry of indium hydroxide doped with at least one metal element, washing and drying the slurry; and calcining the dried slurry in the air at a temperature of from 500° C. to 900° C. 58. The process according to claim 57, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. 59. A process for producing the electro-conductive oxide particle according to claim 12, which comprises contacting an aqueous medium containing a mixture of an In compound, a Nb compound and an Sb compound with a heat resistant strongly basic ion exchange resin, followed by heating at a temperature of from 40 to 100° C. to form a slurry of indium hydroxide doped with at least one metal element, drying the slurry and calcining the dried slurry in the air at a temperature of from 500 to 900° C. 60. The process according to claim 59, wherein after said calcining, the process further comprises reducing calcination in an atmosphere comprising hydrogen and nitrogen in a volume % of 2-100:98-0 and at a temperature of from 80 to 450° C. f time sufficient to increase the glass transition temperature of the sample above 20° C. 10. A storage particle adapted for long-term ambient temperature preservation of a sensitive biological material, comprising a dehydrated preparation of the sensitive biological material, a first layer comprising a hydrophobic substance which surrounds the dehydrated preparation of the biological material, and a second layer comprising a hard shell at ambient temperature which surrounds the first layer, wherein said first layer minimizes exposure of the dehydrated preparation of the biological material to atmospheric moisture. 11. The storage particle of claim 10, wherein the hydrophobic substance comprises a fat or an oil. 12. The storage particle of claim 11, wherein the fat or oil is selected from the group consisting of cottonseed, corn, palm, soy, grapeseed (canola), cod-liver and other fish-based oils, omega-3 fatty acids, neem, olive, peanut, poppy, safflower, sesame and wheat-germ. 13. The storage particle of claim 10, wherein the second layer comprises a material selected from the group consisting of a sugar, a protein, a polymer, or a mixture thereof. 14. The storage particle of claim 10, wherein the dehydrated preparation of the sensitive biological material further comprises a protectant formulation.