IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0034156
(2001-12-26)
|
발명자
/ 주소 |
|
출원인 / 주소 |
- Arlington Industries, Inc
|
인용정보 |
피인용 횟수 :
21 인용 특허 :
7 |
초록
▼
The disclosure shows an electrical connector with both a snap ring and threaded end for fastening the connector to an access hole in an electrical junction box. The snap ring has snap lock tangs to hold the connector in the box and resist pull out forces. The snap ring also has grounding tangs for g
The disclosure shows an electrical connector with both a snap ring and threaded end for fastening the connector to an access hole in an electrical junction box. The snap ring has snap lock tangs to hold the connector in the box and resist pull out forces. The snap ring also has grounding tangs for grounding the connector. Also, the connector has locking tabs that are designed to be seated in apertures located in the leading end of the connector. The connector has a threaded leading end having a standard pitch, which has been truncated to a smaller diameter. As the snap ring is very thin, it can be easily stamped from thin spring steel or its equivalent and mass-produced at a low unit cost. The snap locking tangs are deflected inward as they are pushed into a typical access hole in an outlet box or electrical panel. The thinness of the snap ring wall permits the snap ring to enter the hole of the electrical junction box and lock the ring and connector together to resist being pulled out. If the installer feels the connector should be threaded into a threaded access aperture or that a standard lock nut should be installed; it is only necessary to use a screwdriver or other tool to manually remove the snap ring and expose the truncated threads.
대표청구항
▼
The disclosure shows an electrical connector with both a snap ring and threaded end for fastening the connector to an access hole in an electrical junction box. The snap ring has snap lock tangs to hold the connector in the box and resist pull out forces. The snap ring also has grounding tangs for g
The disclosure shows an electrical connector with both a snap ring and threaded end for fastening the connector to an access hole in an electrical junction box. The snap ring has snap lock tangs to hold the connector in the box and resist pull out forces. The snap ring also has grounding tangs for grounding the connector. Also, the connector has locking tabs that are designed to be seated in apertures located in the leading end of the connector. The connector has a threaded leading end having a standard pitch, which has been truncated to a smaller diameter. As the snap ring is very thin, it can be easily stamped from thin spring steel or its equivalent and mass-produced at a low unit cost. The snap locking tangs are deflected inward as they are pushed into a typical access hole in an outlet box or electrical panel. The thinness of the snap ring wall permits the snap ring to enter the hole of the electrical junction box and lock the ring and connector together to resist being pulled out. If the installer feels the connector should be threaded into a threaded access aperture or that a standard lock nut should be installed; it is only necessary to use a screwdriver or other tool to manually remove the snap ring and expose the truncated threads. ctor layer formed so as to cover the conductive protrusions and the first electrode layer, and at least one of said first insulating base having an electrode layer and said second insulating base having an electrode layer is transparent. 2. The photoelectric cell as claimed in claim 1, wherein the metal oxide semiconductor layer is formed along a contour of the conductive protrusions. 3. The photoelectric cell as claimed in claim 1, wherein the metal oxide semiconductor layer comprises spherical particles of at least one of metal oxides selected from the group consisting of titanium oxide, lanthanum oxide, zirconium oxide, niobium oxide, tungsten oxide, strontium oxide, zinc oxide, tin oxide and indium oxide. 4. The photoelectric cell as claimed in claim 3, wherein the spherical particles have an average particle diameter ranging from 5 to 600 nm. 5. The photoelectric cell as claimed in claim 4, wherein the spherical particles are composed of anatase titanium oxide. 6. The photoelectric cell as claimed in claim 4, wherein the spherical particles are those having a core-shell structure comprising a core particle of 0.1 to 500 nm in average particle diameter having its surface covered with a shell. 7. The photoelectric cell as claimed in claim 6, wherein the shell of the spherical particles of the core-shell structure is composed of anatase titanium oxide. 8. The photoelectric cell as claimed in claim 5, wherein the anatase titanium oxide is one obtained by subjecting peroxotitanic acid to heating and aging. 9. The photoelectric cell as claimed in claim 2, wherein the metal oxide semiconductor layer comprises spherical particles of at least one of metal oxides selected from the group consisting of titanium oxide, lanthanum oxide, zirconium oxide, niobium oxide, tungsten oxide, strontium oxide, zinc oxide, tin oxide and indium oxide. 10. The photoelectric cell as claimed in claim 6, wherein the anatase titanium oxide is one obtained by subjecting peroxotitanic acid to heating and aging. 11. The photoelectric cell as claimed in claim 1, wherein the metal oxide semiconductor layer contains a titanium oxide binder. 12. The photoelectric cell as claimed in claim 1, wherein the metal oxide semiconductor layer is one obtained by implanting ions of at least one gas selected from the group consisting of O2,N2,H2and inert gases of Group 0 of the periodic table and thereafter annealing. 13. The photoelectric cell as claimed in claim 1, wherein the metal oxide semiconductor layer has a pore volume of 0.05 to 0.8 ml/g and an average pore diameter of 2 to 250 nm. 14. A process for producing a metal oxide semiconductor film for use in a photoelectric cell, comprising applying a coating liquid comprised of peroxotitanic acid, anatase titanium oxide particles and a dispersion medium to obtain a coating film and curing the coating film, wherein the coating film is cured by irradiating the coating film with ultraviolet light irradiation, subsequently subjecting the coating film to implantation of ions of at least one gas selected from the group consisting of O2,N2,H2and inert gases of Group 0 of the periodic table and thereafter annealing.
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